Globalfoundries Inc.

Ming Hao Tang

Rui Chen

Yuping Ren

Ruilong Xie

Hui Zang

Haiting Wang

Haigou Huang

Scott Beasor

Michael Vincent Aquilino

Huy Cao

Jessica M Dechene

Wei Zhao

Patrick D Carpenter

Bradley Morgenfeld

Zheng G Chen

Xiaofeng Qiu

A method of forming isolation pillars for a gate structure, the method including: providing a preliminary structure including a substrate having a plurality of fins thereon, an STI formed between adjacent fins, an upper surface of the STIs extending higher than an upper surface of the fins, and a hardmask over the upper surface of the fins and between adjacent STIs; forming a first trench in a first selected STI and between adjacent fins in a gate region, and forming a second trench in a second selected STI and between adjacent fins in a TS region; and filling the first and second trenches with an isolation fill thereby forming a first isolation pillar in the gate region and a second isolation pillar in the TS region, the first and second isolation pillars extending below the upper surface of the STIs.

Isolation pillar first gate structures and methods of forming same

This disclosure relates to a structure for aligning layers of an integrated circuit (IC) structure that may include a first dielectric layer positioned above a semiconductor substrate having one or more active devices, a trench stop layer positioned above the first dielectric layer, a second dielectric layer positioned above the trench stop layer, and a plurality of metal-filled marking trenches extending vertically through the second dielectric layer and the trench stop layer and at least partially into the first dielectric layer. The metal-filled trenches are electrically isolated from any active devices contained in the IC.

Mark structure for aligning layers of integrated circuit structure and methods of forming same

A tone inversion method for integrated circuit (IC) fabrication includes providing a substrate with a layer of amorphous carbon over the substrate and a patterning layer over the amorphous carbon layer. The patterning layer is etched to define a first pattern of raised structures and a complementary recessed pattern that is filled with a layer of image reverse material. The first pattern of raised structures is then removed to define a second pattern of structures comprising the image reverse material. A selective etching step is used to transfer the second pattern into a dielectric layer disposed between the layer of amorphous carbon and the substrate.

Tone inversion method and structure for selective contact via patterning

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Ballston Lake, NY, United States of America

Ming Hao Tang