Csmc Technologies Fab2 Co., Ltd.

Ming Gu

Shuming Guo

Bin Chen

Hao Wang

Youhui Li

Nan Zhang

Yongqiang Hu

Xinmiao Zhao

Zongchuan Wang

A semiconductor memory comprising: a comparison readout circuit comprising a first port configured to receive an electric signal of a read memory unit and a second port configured to receive a reference electric signal, the comparison readout circuit being configured to compare the electric signal of the read memory unit with the reference electric signal to obtain storage information of the memory unit; and a first/second column decoder connected to a first/second memory array and the comparison readout circuit and configured to select a bitline corresponding to the read memory unit when a memory array selection signal enables the first/second memory array, and output the electric signal of the memory unit to the first port by means of the bitline, and further configured to connect a first bitline of the first/second memory array to the second port when the memory array selection signal does not enable the first/second memory array.

Semiconductor memory including a current comparison readout circuit

A semiconductor memory, comprising a negative voltage providing unit, which is used for providing a first negative voltage to a word line during a read operation, and comprises: a clamping unit that comprises an input end, a control end and an output end, wherein the input end is coupled to a common ground end of the memory, and the control end is used for receiving a first signal; an energy storage capacitor, a first end of which is coupled to the output end, and a second end that is used for receiving a second signal; and a negative voltage providing end which is coupled to the first end, wherein the clamping unit is used for: pulling the voltage at the output end to the voltage at the input end when the first signal is '0'; and clamping the output end at a clamping voltage when the first signal is “1”.

Semiconductor memory

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Wuxi, China

Ming Gu