Taiwan Semiconductor Manufacturing Comp. Ltd.

Acer Inc.

Wiwynn Corporation

Ming-Feng Hsieh

Chun-Heng Chen

Hongfa Luan

Chi-Ming Liao

Sheng-Po Wu

Hung-Chi Chen

Yu-Ming Lin

Shun-Bin Chen

Huei-Ting Chuang

Zheng-Yan Lee

Ping-Sheng Yeh

Ju-Hsien Weng

Tzu-Hsiang Chang

Yee-Chia Yeo

Hsueh-Chang Sung

Chien-Hao Chen

Pei-Ren Jeng

De-Wei Yu

Ching-Lun Lai

Chia-Hsin Hsieh

Chun-Chih Kuo

Hung-Lung Lin

Yi-Chi Huang

Yan-Yu Chen

Yuan-Chun Sie

Sheng-Yu Weng

Po-Yi Tseng

Chih-Cheng Chen

David Sung

Chien-Chia Cheng

A method includes etching a semiconductor substrate to form a trench between a first semiconductor strip and a second semiconductor strip. The first semiconductor strip has a first width at about 5 nm below a top of the first semiconductor strip and a second width at about 60 nm below the top of the first semiconductor strip. The first width is smaller than about 5 nm, and the second width is smaller than about 14.5 nm. The trench is filled with dielectric materials to form an isolation region, which is recessed to have a depth. A top portion of the first semiconductor strip protrudes higher than the isolation region to form a protruding fin. The protruding fin has a height smaller than the depth. A gate stack is formed to extend on a sidewall and a top surface of the protruding fin.

Fin bending reduction through structure design

An electronic device includes a casing, a driven component, a magnetic component and an electromagnetic component. The casing has an outer surface, an inner surface, and an accommodating groove penetrating through the outer surface and the inner surface. The driven component is movably disposed in the accommodating groove. The magnetic component is connected to the driven component. The electromagnetic component is aligned with the magnetic component, and the magnetic component and the electromagnetic component are located at the same side of the inner surface. When the electromagnetic component isn't powered, the magnetic component and the electromagnetic component are attracted to each other, and the driven component is positioned at a first position. When the electromagnetic component is powered, the magnetic component and the electromagnetic component are repulsed to each other so as to drive the driven component to move from the first position to the second position.

Electronic device

A method of manufacturing a semiconductor structure includes depositing a silicon layer over a substrate, removing a portion of the silicon layer to form a gate stack, and performing a hydrogen treatment on the gate stack to repair a plurality of voids in the stack structure.

Semiconductor device and fabrication method therefor

A system and a method for monitoring a video communication device configured to monitor an activation state of a video capturing module are provided. A detection circuit is configured to detect an operation current input to the video capturing module. A control circuit is electrically connected to the detection circuit and determines whether the video capturing module is activated according to a magnitude of the operation current.

System and method for monitoring video communication device

A server apparatus is movably disposed on a rack. The server apparatus includes a base and a plurality of detachable carriers. The base has a baffle, and an accommodating space of the base is divided into several loading regions by the baffle. Each detachable carrier can include a substrate, a first supporter and a second supporter. The substrate has a first region and a second region adjacent to each other. The first supporter is detachably disposed on the first region. The second supporter is disposed adjacent to the first supporter and detachably disposed on the second region. The first supporter and the second supporter are utilized to support several electronic devices.

Detachable carrier and related server apparatus

A chassis includes a housing, a partition, a movable member and a tray. The housing includes a top plate and a bottom plate, and the top plate is opposite to the bottom plate. An accommodating space is located between the top plate and the bottom plate. The bottom plate has a through hole. The partition is disposed in the accommodating space. The movable member is connected to the partition. The movable member is configured to move between a first position and a second position. The tray includes a latch member. When the movable member is located at the first position and the tray is placed into the accommodating space, the movable member is embedded into the through hole and the latch member engages with the movable member. When the movable member is located at the second position, the movable member disengages from the through hole.

Chassis

Presented herein is a device including an insulator layer disposed over a substrate. An adhesion layer is disposed over the insulator layer and includes a semiconductor oxide, the semiconductor oxide includes a compound of a semiconductor element and oxygen. A semiconductor film layer is over the adhesion layer, the semiconductor film layer being a material that includes the semiconductor element, the semiconductor film layer having a different composition than the adhesion layer. Bonds at an interface between the insulator layer and the adhesion layer comprise oxygen-hydrogen bonds and oxygen-semiconductor element bonds. An interface between a dummy gate and a gate dielectric layer of a gate-last transistor structure may be similarly formed.

Semiconductor film with adhesion layer and method for forming the same

Presented herein is a device including an insulator layer disposed over a substrate. An adhesion layer is disposed over the insulator layer and includes a semiconductor oxide, the semiconductor oxide including a compound of a semiconductor element and oxygen. A semiconductor film layer is over the adhesion layer, the semiconductor film layer being a material including the semiconductor element, the semiconductor film layer having a different composition than the adhesion layer. Bonds at an interface between the insulator layer and the adhesion layer comprise oxygen-hydrogen bonds and oxygen-semiconductor element bonds.

Presented herein is a method for forming a semiconductor film using an adhesion layer, comprising providing an oxide layer disposed over a substrate, forming at least one adhesion layer over the oxide layer, and forming a film layer over the at least one adhesion layer in a same process step as the forming the at least one adhesion layer. Forming the at least one adhesion layer further comprises at least forming a first adhesion layer over the oxide layer and forming a second adhesion layer over the first adhesion layer. Forming the first adhesion layer comprises providing the terminating gas at a substantially constant first flow rate, and wherein the forming the second adhesion layer comprises ramping a flow rate of the terminating gas to a zero flow rate from the first flow rate.

Growing community of inventors

Taipei, Taiwan

Ming-Feng Hsieh