Anhui University

Ming Fang

Zhixiang Huang

Jian Feng

Ke Xu

Lixia Yang

Xingang Ren

Kaikun Niu

Wei Yang

Guangshang Cheng

Yang Shi

Meijun Kang

Donghua Zhou

Rongsheng Cheng

Xingchen Liu

Xuesong Deng

Yihao Li

Qing Ci

Zhicheng Xiao

Chenran Liu

Zhenshan Guan

Described is a broadband near infrared absorber, including a wide-type cross-shaped gold layer, an indium tin oxide (ITO) thin film, a silicon dioxide (SiO) layer and a hollowed-out cross-shaped gold layer arranged from top to bottom. A length of the cross-shaped gold layer is the same as a length of the hollowed-out cross-shaped gold layer. A width of the cross-shaped gold layer is the same as a width of the hollowed-out cross-shaped gold layer. A thickness of the cross-shaped gold layer is different from a thickness of the hollowed-out cross-shaped gold layer.

Broadband infrared absorber based on epsilon-near-zero material

Provided is an electromagnetic field simulation method based on a face-centered cubic and a subgrid, including setting periodic boundary conditions and a metal plate to construct an electromagnetic field simulation model based on the face-centered cubic, FDTD and the subgrid; through the electromagnetic field simulation model, setting the source point in the subgrid region, selecting the detecting point, simulating the electromagnetic field simulated, and obtaining the moment domain waveform diagram of the electric field in the simulation region.

Electromagnetic field simulation method based on face-centered cubic and subgrid technique

This disclosure provides a perovskite light-emitting diode with an adjustable light field, including a glass layer, an anode, a hole transport layer, an emission layer, an electron transport layer and a cathode in sequence from top to bottom. The electron transport layer is provided with a periodic nano-grating structure.

Perovskite light-emitting diode with adjustable light field

Growing community of inventors

Hefei, China

Ming Fang