Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming-Fa Chen

Hsien-Wei Chen

Sung-Feng Yeh

Chen-Hua Douglas Yu

Jie Chen

Tzuan-Horng Liu

Chao-Wen Shih

Sen-Bor Jan

Chih-Chia Hu

Ying-Ju Chen

Wen-Chih Chiou

Ching-Jung Yang

Chen-Shien Chen

Nien-Fang Wu

Wen-Ching Tsai

Ching-Pin Yuan

Hsien-Pin Hu

Yi-Hsiu Chen

Wen-Wei Shen

Jao Sheng Huang

Yu-Young Wang

Min-Chien Hsiao

Jian-Wei Hong

Jing-Cheng Lin

Shau-Lin Shue

Hsiao-Tsung Yen

Chen-Cheng Kuo

Yung-Chi Lin

Chin-Wei Kuo

Chao-Hsiang Yang

Sally Liu

Jhe-Ching Lu

I-Ching Lin

Chun-Chiang Kuo

Hui-Wen Liu

Jiun Ren Lai

Jiun-Heng Wang

Wensen Hung

Tsung-Yu Chen

Rung-De Wang

Yung-Jean Lu

Chang-Ching Yu

Sheng-An Kuo

Chuan-An Cheng

Meng-Wei Chiang

Chi-Hwang Tai

Wen-Sen Lu

Ying-Ching Shih

Po-Hsiang Huang

Yi-Kan Cheng

Fong-yuan Chang

Chin-Chou Liu

Shih-Shiung Chen

Ying-Chen Chao

Jen-Li Hu

Noor Mohamed Ettuveettil

Chung-Shi Liu

Shin-Puu Jeng

Ming-Da Cheng

Hsiu-Jen Lin

Chih-Hua Chen

Meng-Tse Chen

Sung-Hui Huang

Yao-Chun Chuang

Hui-Min Huang

Ming-Yen Chiu

Yuan-Hung Liu

Chia-Hsiang Chen

Sheng-Yuan Lin

Yao-Hwan Kao

De-Yuan Lu

Chih-Chien Hung

Fu-Tien Wong

Ho-Ku Lan

Ming-Chang Huang

Jia-Sheng Lee

Wen-Chih Chiu

Cheng-Feng Chen

Chia-Yen Lee

Chin-Shyh Wang

Ta-Hao Sung

A method of forming a package includes bonding a device die to an interposer wafer, with the interposer wafer including metal lines and vias, forming a dielectric region to encircle the device die, and forming a through-via to penetrate through the dielectric region. The through-via is electrically connected to the device die through the metal lines and the vias in the interposer wafer. The method further includes forming a polymer layer over the dielectric region, and forming an electrical connector. The electrical connector is electrically coupled to the through-via through a conductive feature in the polymer layer. The interposer wafer is sawed to separate the package from other packages.

Buffer design for package integration

A package structure including a device die structure, an insulating encapsulant, and a first redistribution circuit is provided. The device die structure includes a first semiconductor die and a second semiconductor die. The first semiconductor die is stacked over and electrically connected to the second semiconductor die. The insulating encapsulant laterally encapsulates the device die structure. The insulating encapsulant includes a first encapsulation portion and a second encapsulation portion connected to the first encapsulation portion. The first encapsulation portion is disposed on the second semiconductor die and laterally encapsulates the first semiconductor die. The second encapsulation portion laterally encapsulates the first insulating encapsulation and the second semiconductor die. The first redistribution circuit structure is disposed on the device die and a first surface of the insulating encapsulant, and the first redistribution circuit structure is electrically connected to the device die.

Package structure

A package includes a carrier substrate, a first die, and a second die. The first die and the second die are stacked on the carrier substrate in sequential order. The first die includes a first bonding layer, a second bonding layer, and an alignment mark embedded in the first bonding layer. The second die includes a third bonding layer. A surface of the first bonding layer form a rear surface of the first die and a surface of the second bonding layer form an active surface of the first die. The rear surface of the first die is in physical contact with the carrier substrate. The active surface of the first die is in physical contact with the third bonding layer of the second die.

Package

A package includes an interposer having a first redistribution structure; a first die directly bonded to a first surface of the first redistribution structure with a dielectric-to-dielectric bond and a metal-to-metal bond; a second die directly bonded to the first surface of the first redistribution structure with a dielectric-to-dielectric bond and a metal-to-metal bond; an encapsulant around the first die and the second die; and a plurality of conductive connectors on a second side of the first redistribution structure opposite to the first die and the second die.

Molded dies in semiconductor packages and methods of forming same

A semiconductor package including hybrid bonding and solder bonding along a first interface and methods of forming the same are disclosed. In an embodiment, a package includes a first interposer, the first interposer including a first redistribution structure; a first die bonded to a first surface of the first redistribution structure with a dielectric-to-dielectric bond and a metal-to-metal bond; a second die bonded to the first surface of the first redistribution structure with a first solder bond; an encapsulant around the first die and the second die; and a plurality of conductive connectors on a second side of the first redistribution structure opposite to the first die and the second die.

Semiconductor packages including mixed bond types and methods of forming same

A semiconductor structure includes an encapsulated die including an electronic die and an insulating layer laterally covering the electronic die, and a photonic die coupled to the encapsulated die. The photonic die includes an optical device in proximity to an edge coupling facet of the photonic die. In a top-down view, a boundary of the electronic die is within a boundary of the insulating layer, and the boundary of the insulating layer is within a boundary of the photonic die.

Semiconductor structure having photonic die and electronic die

A semiconductor device including a test pad contact and a method of manufacturing the semiconductor device are disclosed. In an embodiment, a semiconductor device may include a first metal feature and a second metal feature disposed in a single top metal layer over a substrate. A test pad may be formed over and electrically connected to the first metal feature. A first passivation layer may be formed over the second metal feature and the test pad and may cover top and side surfaces of the test pad. A first via may be formed penetrating the first passivation layer and contacting the test pad and a second via may be formed penetrating the first passivation layer and contacting the second metal feature.

Semiconductor device and method of manufacture

A semiconductor package includes a first die including an optical coupler, a second die disposed on the first die, and a transparent encapsulation material disposed on the first die. The second die includes a substrate and a transparent portion disposed within the substrate and optically coupled to the optical coupler. The transparent encapsulation material extends along sidewalls of the substrate of the second die.

Semiconductor package

A semiconductor package includes a first die, a second die, an encapsulating material, and a redistribution structure. The second die is disposed over the first die and includes a plurality of bonding pads bonded to the first die, a plurality of through vias extending through a substrate of the second die and a plurality of alignment marks, wherein a pitch between adjacent two of the plurality of alignment marks is different from a pitch between adjacent two of the plurality of through vias. The encapsulating material is disposed over the first die and at least laterally encapsulating the second die. The redistribution structure is disposed over the second die and the encapsulating material and electrically connected to the plurality of through vias.

Semiconductor package and method of manufacturing semiconductor package

A semiconductor structure includes a stacked die including a lower portion and an upper portion stacked upon the lower portion. The lower portion includes a first patterned conductive pad, a first conductive connector passing through the first patterned conductive pad, a first patterned dielectric layer covering the first patterned conductive pad and laterally isolating the first conductive connector from the first patterned conductive pad. The upper portion includes a second conductive connector bonded to the first conductive connector, and a second patterned dielectric layer bonded to the first patterned dielectric layer.

Semiconductor structure and manufacturing method thereof

A die stack structure including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a redistribution circuit structure is provided. The first semiconductor die includes a first semiconductor substrate including a first portion and a second portion, a first interconnect structure and a first bonding structure. The first interconnect structure is disposed on a top surface of the second portion, a lateral dimension of the first portion is greater than a lateral dimension of the top surface of the second portion. The second semiconductor die is disposed on the first semiconductor die and includes a second bonding structure, the second semiconductor die is electrically connected with the first semiconductor die through the first and second bonding structures. The insulating encapsulation is disposed on the first portion and laterally encapsulating the second portion and the second semiconductor die. The redistribution circuit structure is electrically connected with the first and second semiconductor dies, and the lateral dimension of the first portion is greater than a lateral dimension of the redistribution circuit structure.

Methods of fabricating package structure

Packages and methods of fabricating the same are provided. The package includes a first die, wherein the first die includes a plurality of through vias from a first surface of the first die toward a second surface of the first die; a second die disposed below the first die, wherein the second surface of the first die is bonded to the second die; an isolation layer disposed in the first die, wherein the plurality of through vias extend through the isolation layer; an encapsulation laterally surrounding the first die, wherein the encapsulation is laterally separated from the isolation layer; a buffer layer disposed over the first die, the isolation layer, and the encapsulation; and a plurality of conductive terminals disposed over the isolation layer, wherein the plurality of conductive terminals is electrically connected to corresponding ones of the plurality of through vias.

Package and method of fabricating the same

A package includes a photonic integrated circuit die and an electric integrated circuit die. The photonic integrated circuit die includes a substrate and a waveguide. The substrate has a notch and the notch is occupied by air. The waveguide is disposed over the substrate. In a top view, a first portion of the waveguide is overlapped with the substrate and a second portion of the waveguide is overlapped with the notch. The electric integrated circuit die is disposed over the photonic integrated circuit die.

Package, optical device, and manufacturing method of package

An integrated circuit includes a conductive pad. In some embodiments, the conductive pad includes at least one dielectric pattern therein, wherein the at least one dielectric pattern penetrates a surface of the conductive pad. In some embodiments, the conductive pad includes a conductive main body and at least one hole in the conductive main body, wherein the at least one hole penetrates a surface of the conductive main body.

Integrated circuits

A package structure includes at least one semiconductor die, an insulating encapsulant, an isolation layer and a redistribution layer. The at least one first semiconductor die has a semiconductor substrate and a conductive post disposed on the semiconductor substrate. The insulating encapsulant is partially encapsulating the first semiconductor die, wherein the conductive post has a first portion surrounded by the insulating encapsulant and a second portion that protrudes out from the insulating encapsulant. The isolation layer is disposed on the insulating encapsulant and surrounding the second portion of the conductive post. The redistribution layer is disposed on the first semiconductor die and the isolation layer, wherein the redistribution layer is electrically connected to the conductive post of the first semiconductor die.

Growing community of inventors

Taichung, Taiwan

Ming-Fa Chen