Industrial Technology Research Institute

Taiwan Semiconductor Manufacturing Comp. Ltd.

National Yang Ming Chiao Tung University

Other

Vanguard International Semiconductor Corporation

United Microelectronics Corp.

Silicon Integrated Systems Corporation

Himax Technologies, Inc.

Faraday Technology Corporation

Tpo Displays Corporation

Pericom Semiconductor Corporation

Toppoly Optoelectronics Corporation

Au Optronics Corporation

Winbond Electronics Corporation

Novatek Microelectronics Corp.

Ming-Dou Ker

Hsin-Chin Jiang

Chyh-Yih Chang

Che-Hao Chuang

Geeng-Lih Lin

Tung-Yang Chen

Hun-Hsien Chang

Ryan Hsin-Chin Jiang

Wen-Yu Lo

Kei-Kang Hung

Jeng-Jie Peng

Kuo-Chun Hsu

Tang-Kui Tseng

Kun-Hsien Lin

Cheng-Cheng Yen

Wen-Yi Chen

Yu-Da Shiu

Chung-Yu Wu

An Shih

Shih-Hung Chen

Tain-Shun Wu

Cheng-Ming Lee

Tien-Hao Tang

Wen-Tai Wang

Yuan-Wen Hsiao

Chi-Sheng Liao

Shao-Chang Huang

Chih-Kang Deng

Sheng-Chieh Yang

Hsin-Chyh Hsu

Li-Wei Chu

Chung-Yuan Lee

Ya-Hsiang Tai

Wen-Hsia Kung

Shih-Lun Chen

Mau-Lin Wu

Paul C F Tong

Karuna Nidhi

Ping Ping Xu

Tang-Kuei Tseng

Ying-Hsin Li

Federico Agustin Altolaguirre

Zi-Ping Chen

Chia-Sheng Tsai

Yu-Yu Sung

Nien-Ming Wang

Chin-Hao Chen

Wein-Town Sun

Chun-Yu Lin

Wei-Ming Chen

Po-Tsun Liu

Yeh-Ning Jou

Yu-Ting Cheng

Tzu-Chien Tzeng

Kuan-Jung Chen

Bo-Shih Huang

Tai-Hsiang Lai

Chau-Neng Wu

Chien-Hua Wu

James Jeng-Jie Peng

Woei-Lin Wu

Fu-Yi Tsai

Yan-Hua Peng

Anna Tam

Chia-Ku Tsai

Kwong Shing Lin

Chun-Lin Hou

Ching-Ling Tsai

Chun Ming Huang

Shih-Fan Chen

Wen-Hsiang Huang

Jie-Ting Chen

Chen-Chia Wang

Wei-Min Wu

Wei-Jen Hsu

Hung-Tai Liao

Fang-Ling Hu

Rong-Kun Chang

Wei-Jen Chang

Ping-Chang Lin

Chein-Ming Lee

Wen-Chieh Chen

Chien-Hui Chuan

Kuo-Chung Lee

Chien-Hui Chung

Chien-Hui Chuang

Hun-Hsin Chang

Kuo-Tsai Lee

Kuo-Feng Wang

Shiau-Pin Lin

Po-Yen Chiu

Jia-Huei Chen

Jang-Jie Peng

Wan-Hsueh Cheng

An integrated circuit includes a T-coil circuit, a silicon-controlled rectifier (SCR), and a signal-loss prevention circuit. The T-coil circuit is coupled to an input/output (I/O) pad and an internal circuit. The SCR is coupled to the T-coil circuit and the internal circuit. The signal-loss prevention circuit is coupled to the T-coil circuit and the SCR. The signal-loss prevention circuit includes a resistor coupled to the T-coil circuit and the SCR. An electrostatic current flows through the resistor and turns on the SCR. The signal-loss prevention circuit may also include a diode circuit coupled to the T-coil circuit and the SCR. The diode circuit is configured to prevent signal loss.

Integrated circuits including coil circuit and SCR

A wireless charging device includes a wireless charging transmitter transmitting a charging signal to a signal gain module to generate at least one gain signal. The signal gain module includes an insulation substrate with an upper surface thereof provided with a first conductive wire. The first conductive wire makes at least one turns arranged along the inner edge of the insulation substrate. The lower surface of the insulation substrate is provided with a second conductive wire whose position corresponds to the position of the first conductive wire. A connecting element is arranged between the first conductive wire and the second conductive wire, such that the first conductive wire is electrically connected to the second conductive wire through the connecting element. The present invention provides a charging signal with high intensity to avoid the low charging efficiency caused by deflection and too long a distance.

Wireless charging device

An active surge protection structure is provided between a power line and a core circuit, comprising a surge-to-digital converter and a clamp circuit. The surge-to-digital converter comprises a plurality of surge detection circuit. Each surge detection circuit detects a surge event occurring on the power line and generates a digital signal. The clamp circuit is disposed adjacent to the core circuit and electrically connected with the surge-to-digital converter and the power line where the core circuit is connected for dissipating surge energy. The clamp circuit receives and is driven by the digital signals from the surge-to-digital converter such that its protection flexibility can be achieved according to the digital signals. By employing the present invention, it is extraordinarily advantageous of improving system stability and achieving comprehensive surge protection with configuration of driving capability dependent on surge levels.

Active surge protection structure and surge-to-digital converter thereof

A negative high-voltage generation device with multi-stage selection includes an input, an output, negative charges pumps, electrical switches, and a control device. The negative charge pumps are electrically cascaded between the input and the output and configured to receive zero voltage through the input. The control device turns off at least one of the electrical switches close to the output and turns on the remains of the plurality of electrical switches, and the negative charge pumps and the electrical switches use zero voltage to generate a negative voltage at the output.

Negative high-voltage generation device with multi-stage selection

A self-balanced diode device includes a substrate, a doped well, at least one first conductivity type heavily doped fin and at least two second conductivity type heavily doped fins. The doped well is arranged in the substrate. The first conductivity type heavily doped fin is arranged in the doped well, arranged in a line along a first direction, and protruded up from a surface of the substrate. The second conductivity type heavily doped fins is arranged in the doped well, arranged in a line along a second direction intersecting the first direction, respectively arranged at two opposite sides of the first conductivity type heavily doped fin, and protruded up from the surface of the substrate. Each second conductivity type heavily doped fin and the first conductivity type heavily doped fin are spaced at a fixed interval.

Self-balanced diode device

A programmable power discharge circuit and a method of discharging power are provided. The programmable power discharge circuit includes a programmable voltage controller, a detect circuit, and a discharge circuit. The programmable voltage controller selects and provides a threshold voltage by a voltage divider including a plurality of impedance components. The detect circuit detects a difference between the threshold voltage and a working voltage to decide whether the working voltage is discharged.

Programmable quick discharge circuit and method thereof

An electronic static discharge protection apparatus provided. A plurality of ESD circuits serially coupled between a pad and a internal circuit, a first stage ESD circuit includes a ESD element directly coupled to the pad, and a last stage ESD circuit includes an inductive element directly coupled to the internal circuit, so as to improve electronic discharge protecting ability of the ESD protection apparatus and increase circuit operation bandwidth without signal loss attenuation.

Electrostatic discharge protection apparatus

A semiconductor device is provided. The semiconductor device includes a substrate; a well region disposed in the substrate; an isolation structure surrounding an active region in the well region; a source region disposed in the well region; a drain region disposed in the well region; a second conductive type first doped region disposed in the well region and disposed along a periphery of the active region; a second conductive type second doped region disposed in the well region and under the source region, the drain region and the second conductive type first doped region, wherein the second conductive type second doped region is in direct contact with the second conductive type first doped region; a source electrode; a drain electrode and a gate electrode. The present disclosure also provides a method for manufacturing the semiconductor device.

Semiconductor device and method for manufacturing the same

A cross-domain electrostatic protection device having four embedded silicon controlled rectifiers (a QSCR structure) embedded in a single cell. Two grounded-gate NMOS transistors are embedded into the cross-domain electrostatic protection device for reducing trigger voltage of the QSCR structure. Furthermore, an external trigger circuit and a bias circuit are applied to the cross-domain electrostatic protection device to reduce trigger voltage of the QSCR structure and leakage current.

Cross-domain electrostatic discharge protection device

The present invention provides an analog memory cell circuit for the LTPS TFT-LCD. The circuit comprises the first transistor, second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the capacitor. It comprises a plurality of operation period, wherein the transistors are controlled in accordance with the first scan signal, the second scan signal, and the third scan signal, the output signal is output in the opposite to the output jack.

Analog memory cell circuit for the LTPS TFT-LCD

A method for fabricating a semiconductor-based planar micro-tube discharger structure is provided, including the steps of forming on a substrate two patterned electrodes separated by a gap and at least one separating block arranged in the gap, forming an insulating layer over the patterned electrodes and the separating block, and filling the insulating layer into the gap. At least two discharge paths are formed. The method can fabricate a plurality of discharge paths in a semiconductor structure, the structure having very high reliability and reusability.

Method for fabricating a planar micro-tube discharger structure

A self-reset transient-to-digital convertor which includes at least one transient detection circuit is disclosed. The transient detection circuit, coupled between a first power line and a second power line, includes at least one voltage drop unit, a current amplifier unit, and a time control unit. When an ESD event occurs, the voltage drop unit is conducted to pass through an ESD current. The current amplifier unit, coupled between the voltage drop unit and the first power line, is conducted by the ESD current to set the level of a first node. The time control unit, coupled between the first node and the second power line, is configured to gradually drain the ESD current away. Wherein, each of the transient detection circuit generates a digital code according to the level of the first node.

Self-reset transient-to-digital convertor and electronic product utilizing the same

ESD protection circuit including a resistor and at least one protection transistor; the resistor coupled between an I/O signal node and an internal node of internal circuit, the protection transistors serially coupled between the internal node and a voltage node with each protection transistor comprising a gate and a drain which is coupled to the gate.

ESD protection circuit

A noise filter circuit for an IC is provided. The noise filter circuit comprises a decoupling unit coupled to a power pad of the IC and a current amplifier circuit coupled to the decoupling unit and the power pad of the IC. The decoupling unit generates a first current in response to a transient voltage being on the power pad of the IC. The current amplifier circuit drains a second current from the power pad of the IC according to the first current.

On-chip noise filter circuit

An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

Polydiode structure for photo diode

Growing community of inventors

Hsinchu, Taiwan

Ming-Dou Ker