Opto Tech Corporation

Highlink Technology Corporation

Opto Tech University

Ming-Der Lin

Kwang-Ru Wang

Chang-Da Tsai

Jung-kuei Hsu

San Bao Lin

Wen-Liang Tseng

Feng-Ju Chuang

San-bao Lin

Yung-Chiang Hwang

Chui-Chuan Chang

Hung-Yuan Lu

Hsueh-Chih Yu

Chia-Chen Chang

Ching-Liang Kao

Chia-Liang Hsu

Jwo-Huei Jou

Jin-Shown Shie

Wen Liang Tseng

San-Bao Lin

Ching-Shih Ma

Yen-Shih Huang

Ping-Kuo Weng

Yen-Hu Chu

Shih-Cheng Huang

Chia Chen Chang

Ming-Fa Yeh

Feng Ju Chuang

Chein-Hsun Wang

Yi-Tai Chung

Gwo-Dawn Chang

An organic electroluminescent device with the feature of three-wavelength luminescence is provided. The device includes a hole transporting layer, an electron blocking layer, a first host material layer, a second host material layer, a hole blocking layer, and an electron transporting layer placed between an anode and a cathode in turn. In which, the first host material layer has a first guest luminous substance mixed therein for projecting a first color light source (B), while the second host material layer correspondingly has a second guest luminous substance and a third guest luminous substance mixed therein for projecting a second color light source (G) and a third color light source (R), respectively, under the effect of an external bias voltage, wherein said second guest luminous substance or said third guest luminous substance may be a phosphorescence substance. Thus, not only a continuously full-band, full-colored light source featuring three-wavelength may be acquired directly by means of the combination of RGB colors, but also an effective utilization of phosphorescence substance and thus significantly raised luminescence efficiency may be obtained.

Organic electroluminescent device and method for producing the same

The present invention discloses a light-emitting diode and a method for manufacturing such a light-emitting diode with a direct band-gap III-V compound semiconductor material on a GaAs substrate. It is implemented by forming a first conductive electrode on the top edge of the epitaxial LED layer and a second conductive electrode opposite the first conductive electrode on the edge of a transparent substrate. Further, after the first conductive electrode and second conductive electrode are connected by chip bonding skill, it is selectively to remove the GaAs substrate and plate a transparent electrode on the top portion of the epitaxial LED layer. Therefore, when casting from P-N junction of the light-emitting diode, the light will go through with directions of the top portion of epitaxial layer and transparent substrate.

Light-emitting diode with cavity containing a filler

An optoelectronic device is disclosed. The optoelectronic device comprises a transparent conductive substrate, an optoelectronic element, and a base. The transparent conductive substrate comprises a transparent plate, a transparent electrode film formed on the transparent plate, and an insulating part formed on the transparent plate. The insulating part divides the transparent electrode film into a first transparent electrode film and a second transparent electrode film that non-conduct each other. The optoelectronic element comprising a positive electrode and a negative electrode is disposed on the transparent conductive substrate and electrically connected to the first transparent electrode film and the second transparent electrode film individually. The base is formed with an opening that has a reflective surface on the bottom of the opening, and the optoelectronic element is held in the opening in a manner of suspending from or connecting with the bottom of the opening.

Optoelectronic device with reflective surface

A full-color display device is disclosed. The present invention comprises a plurality of pixel units each comprising a base, a plurality of transparent conductive substrates, a plurality of light emitting elements, and a plurality of electrode parts. The base has at least three openings formed thereon, the bottom of each opening is a reflective surface, and each of the transparent conductive substrates individually covers each opening. Each of the light emitting elements is individually disposed on one side of each transparent conductive substrate and held in each opening. Each of the electrode parts is formed on the base and electrically connected to the electrodes of the light emitting elements and the transparent conductive substrates.

Full-color display device

A light emitting diode package structure includes an insulating carrier base formed with a recess or a through hole. The recess or the through hole has a depth enough for completely accommodating a light emitting diode. The recess or the through hole may have two stepwise portions for providing two intermediate mesa planes. Two planar metal layers are separately formed on the two intermediate mesa planes and, respectively, connected to two metal pads which are arranged outside of the recess or the through hole. Two wiring lines connect two electrodes of the light emitting diode with the two planar metal layers, respectively. A resin fills the recess or the through hole for sealing all of the light emitting diode and the two wiring lines.

Light emitting diode package structure

The present invention discloses a light-emitting device with improved reliability so as to achieve a prolonged lifetime, better stability and excellent illumination quality. The light-emitting device comprises a substrate; a light-emitting component, having a p-n junction, mounted on a top surface of the substrate so as to be connected to corresponding metal pads through at least one conducting wire; and a cap, formed of a transparent material to have an inward concave, wherein the light-emitting component is disposed in the inward concave such that there is a gap between the light-emitting component and the cap.

Light-emitting device with improved reliability

A light-emitting diode with enhanced brightness and a method for fabricating the diode is provided. The light-emitting diode includes an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of windows formed in a highly doped layer. At least one conductive contact is formed on the bottom surface of the highly doped layer. A transparent material layer is formed in the windows. An adhesion layer is formed between the transparent material layer and a permanent substrate. A bottom electrode is formed on the bottom surface of the permanent substrate and an opposed electrode is formed on the top surface of the epitaxial LED structure.

Light-emitting diode with enhanced brightness and method for fabricating the same

The present invention discloses a light-emitting diode with enhanced light-emitting efficiency, in which the active current is prevented from flowing in the region under the top electrode so that the light-emitting efficiency as well as the brightness can be improved. The light-emitting diode comprises: a substrate; a first electrode formed on the bottom surface of the substrate; an epitaxial LED structure having a pn junction formed on the top surface of the substrate, and a groove formed on the epitaxial LED structure passing through the pn junction such that the epitaxial LED structure is divided into a first epitaxial LED region and a second epitaxial LED region, and the groove having a side light-reflective layer and an insulating layer; a bottom insulating layer formed on the top surface of the first epitaxial LED region; a second electrode formed on the top surface of the bottom insulating layer; and a plurality of extending conductive contacts formed on the top surface of the second epitaxial LED region, each extending conductive contact connected to the second epitaxial LED region through an extending conductive wire.

Light-emitting diode with enhanced light-emitting efficiency

A base of an optoelectronic device is disclosed. The present invention comprises an opening and a reflective surface. The base of the optoelectronic device incorporates with a transparent conductive substrate and an optoelectronic element to construct the optoelectronic device, wherein the optoelectronic element is disposed on the transparent conductive substrate, and the opening is used to hold the optoelectronic element. Moreover, the transparent conductive substrate is placed on the top of the opening, and the reflective surface is located at the bottom in the opening.

Base of optoelectronic device

The present invention discloses a white light emitting organic electroluminescent (EL) device and a method for fabricating the same. The device comprises: a substrate; an anode formed on the substrate; at least one hole transporting layer formed on the anode; at least one luminescent layer (DPVBi) formed on the hole transporting layer, wherein a first dopant (DCM ) is doped into the luminescent layer; at least one electron transporting layer formed on the luminescent layer, wherein a second dopant (C ) is doped into the electron transporting layer; and a cathode formed on the electron transporting layer; wherein a first light (red) is emitted by the first dopant, a second light (green) is emitted by the second dopant, and a third light (blue) is emitted by the luminescent layer when the device is applied with a bias voltage.

White light emitting organic electroluminescent device and method for fabricating the same

An optoelectronic unit and a transparent conductive substrate of the same are disclosed. The transparent conductive substrate comprises a transparent plate, a transparent electrode film, an insulation part, and a bounding pad, wherein the transparent electrode film and the insulation part are formed on the transparent plate, the insulation part divides the transparent electrode film into a first transparent electrode film area and a second transparent electrode film area that non-conduct each other, and the bounding pad is formed on the second transparent electrode film area. The optoelectronic unit comprises the aforementioned transparent conductive substrate, an optoelectronic element, and a conductive wire, wherein one electrode of the optoelectronic element is electrically connected to the aforementioned first transparent electrode film area, and the other electrode of the optoelectronic element is electrically connected to the aforementioned bounding pad by the conductive wire.

Optoelectronic unit and transparent conductive substrate of the same

The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.

A forming method and a structure of a high efficiency electro-optics device are disclosed. In the present invention, the cell-fixing surface between the die carrier and the electro-optics cell is decreased to increase the light emitting and absorbing regions of the electro-optics device. Thus, the operating efficiency and the sensitivity of the electro-optics device is increased substantially. Especially, the present invention has the advantage of fully showing the efficacy of device using the transparent substrate. Furthermore, when the electro-optics cell is fixing on the cell-fixing surface by utilizing the eutectic or metal-melting bonding method, a result of self-alignment can be achieved. Thus, the accuracy of the packaging device is increased substantially, thereby reducing the loss caused by the failure of poor cell-fixing while in mass production and meanwhile increasing the accuracy of fixing cell. Therefore, the present technology is quite suitable for use in the packaging of high precision.

Structure and method for forming a high efficiency electro-optics device

A method for packaging an electro-optics device is disclosed. A transparent material is added between the die carrier and the electro-optics device, so that the light emitted from the backside of the electro-optics device can be extracted. Furthermore, a light reflective layer is formed on the die carrier, and a pattern of the light reflective layer is designed to prevent the light from being reflected to the active layer, the reflecting decreasing light-emitting efficiency again.

Method for packaging a high efficiency electro-optics device

A method and a structure for packaging an electro-optics device are disclosed. A transparent material is added between the die carrier and the electro-optics device, so that the light emitted from the backside of the electro-optics device can be extracted. Furthermore, a light reflective layer is formed on the die carrier, and a pattern of the light reflective layer is designed to prevent the light from being reflected to the active layer, the reflecting decreasing light-emitting efficiency again.

Growing community of inventors

Hsinchu, Taiwan

Ming-Der Lin