Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming Chyi Liu

Shih-Chang Liu

Chia-Shiung Tsai

Jhih-Bin Chen

Yuan-Tai Tseng

Yu-Hsing Chang

Sheng-Chieh Chen

Yong-Sheng Huang

Hung-Shu Huang

Chang-Ming Wu

Harry-Hak-Lay Chuang

Alexander Kalnitsky

Wei Cheng Wu

Chern-Yow Hsu

Ru-Liang Lee

Lee-Chuan Tseng

Shih-Wei Lin

Yung-Chang Chang

Chi-Ming Chen

Po-Chun Liu

Chien-Chih Chou

Chung-Yen Chou

Chih-Pin Huang

Eugene Chen

Chen Yu Chen

Kong-Beng Thei

Chih-Ming Chen

Chung-Yi Yu

Chen-Jong Wang

Jiech-Fun Lu

Xiaomeng Chen

Yi-Huan Chen

Gwo-Yuh Shiau

Sheng-De Liu

Tung-He Chou

Che-Ming Chang

Shih-Chung Hsiao

Der-Chyang Yeh

Tzu-Hsuan Hsu

Hsun-Chung Kuang

Chia-Cheng Ho

Hung-Ling Shih

Chih-Ping Chao

Chih-Ren Hsieh

Ting-Jung Chen

Wei-Ming Wang

Kaochao Chen

Ming-Lun Lee

Chen-Hua Douglas Yu

Yeur-Luen Tu

Wei-Cheng Wu

Jiun-Lei Jerry Yu

Yuan-Chih Hsieh

Sheng-Chau Chen

Sheng-Chan Li

Yi-Chen Chen

Chi-Hsin Lo

Yu-Chang Jong

Hua-Chou Tseng

Yuan-Hung Liu

Hung-Wen Hsu

Chun-Tsung Kuo

Martin Liu

Jhu-Min Song

Chih-Jen Chan

Min-Yung Ko

Li-Wen Chang

Yu-Lun Lu

Tsung-chieh Tsai

Hsieh Ching Pei

Yao Fei Chuang

Chia-Shiung Tsa

Yi-Kai Ciou

An integrated chip includes a gate structure overlying a substrate between a source region and a drain region. A field plate is disposed within a first dielectric layer overlying the substrate. The field plate is laterally offset from the gate structure by a non-zero distance in a direction towards the drain region. An isolation structure is disposed within the substrate. The field plate directly overlies at least a portion of the isolation structure.

Field plate and isolation structure for high voltage device

Some embodiments pertain to a semiconductor device. The semiconductor device includes a semiconductor substrate including a trench extending downward into an upper surface of the semiconductor substrate. The trench includes a bottom surface and a plurality of scallops along sidewalls of the trench. An oxide layer lines the bottom surface and the sidewalls of the trench. The oxide layer has varying thicknesses along the sidewalls of the trench at different depths. The varying thicknesses step down at discrete increments as a depth into the trench increases.

High aspect ratio bosch deep etch

In some embodiments, the present disclosure relates to an integrated circuit (IC), including a first insulating layer which includes a first metal interconnect structure stacked above a bottom die. Including a substrate disposed above the first insulating layer, a second metal interconnect structure disposed above the substrate, a through-substrate via (TSV) directly connecting the first metal interconnect structure to the second metal interconnect structure, and a stacked deep trench capacitor (DTC) structure disposed in the substrate. The DTC structure includes a first plurality of trenches extending from a first side of the substrate and a second plurality of trenches extending from a second side of the substrate.

Double-sided stacked DTC structure

In some embodiments, the present disclosure relates to a device that includes an interconnect structure arranged on a frontside of a substrate. The interconnect structure includes interconnect conductive structures embedded within interconnect dielectric layers. A trench extends completely through the substrate to expose multiples ones of the interconnect conductive structures. A bond pad structure is arranged on a backside of the substrate and extends through the trench of the substrate to contact the multiple ones of the interconnect conductive structures. A bonding structure is arranged on the backside of the substrate and electrically contacts the bond pad structure.

Bond pad structure coupled to multiple interconnect conductive\ structures through trench in substrate

A semiconductor structure and method of manufacture is provided. In some embodiments, a semiconductor structure includes a semiconductor layer comprising a first uppermost surface, a lowermost surface, and a first sidewall surface extending between the uppermost surface and the lowermost surface. A gate dielectric layer is over the semiconductor layer. A first gate electrode is over a portion of the gate dielectric layer over the uppermost surface of the semiconductor layer. A first source/drain region is in the semiconductor layer under the first uppermost surface and adjacent the first gate electrode. A second source/drain region is in the semiconductor layer under the lowermost surface of the semiconductor layer.

Semiconductor structure including source/drain regions at different levels within semiconductor layer and method of manufacture

The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed directly on an upper surface of the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.

Boundary design for high-voltage integration on HKMG technology

Some embodiments relate to a method for forming a vertical cavity surface emitting laser (VCSEL) structure. The method includes forming an optically active layer over a lower reflective layer and forming an upper reflector over the optically active layer. A first spacer is formed along sidewalls of the upper reflector. An oxidation process is performed with the first spacer in place to oxidize a peripheral region of the optically active layer. A first etch process is performed on the lower reflective layer and the oxidized peripheral region, thereby forming a lower reflector and an optically active region.

Techniques for vertical cavity surface emitting laser oxidation

The present disclosure relates to an integrated chip comprising a substrate having a first pair of opposing sidewalls that define a trench. The trench extends into a front-side surface of the substrate. A first source/drain region is disposed along the front-side surface of the substrate. A second source/drain region is disposed along the front-side surface of the substrate. A gate structure is disposed within the trench and is arranged laterally between the first source/drain region and the second source/drain region. The gate structure fills the trench and extends along the first pair of opposing sidewalls to an upper surface of the substrate. A bottom surface of the gate structure is disposed below a bottom surface of the first source/drain region.

Integrated chip with a gate structure disposed within a trench

Various embodiments of the present disclosure are directed towards an integrated chip including a piezoelectric membrane overlying a substrate. A plurality of conductive layers is disposed within the piezoelectric membrane. The plurality of conductive layers comprises a first conductive layer over a second conductive layer. The first conductive layer comprises a first electrode and the second conductive layer comprises a second electrode. A first conductive via is disposed in the piezoelectric membrane and contacts the first electrode. A second conductive via is disposed in the piezoelectric membrane and contacts the second electrode. A sidewall of the second conductive via comprises a vertical sidewall segment overlying a slanted sidewall segment.

Fully-wet via patterning method in piezoelectric sensor

The present disclosure relates to an integrated chip. The integrated chip includes a source region disposed within a substrate, and a drain region disposed within the substrate and separated from the source region. A plurality of separate isolation structures are disposed within the substrate. The plurality of separate isolation structures have outermost sidewalls that face one another and that are separated from one another. A gate electrode is disposed within the substrate. The gate electrode includes a base region disposed between the source region and the plurality of separate isolation structures and a plurality of gate extensions extending outward from a sidewall of the base region to over the plurality of separate isolation structures.

High voltage device with gate extensions

Various embodiments of the present disclosure provide a method for forming a recessed gate electrode that has high thickness uniformity. A gate dielectric layer is deposited lining a recess, and a multilayer film is deposited lining the recess over the gate dielectric layer. The multilayer film comprises a gate electrode layer, a first sacrificial layer over the gate dielectric layer, and a second sacrificial layer over the first sacrificial dielectric layer. A planarization is performed into the second sacrificial layer and stops on the first sacrificial layer. A first etch is performed into the first and second sacrificial layers to remove the first sacrificial layer at sides of the recess. A second etch is performed into the gate electrode layer using the first sacrificial layer as a mask to form the recessed gate electrode. A third etch is performed to remove the first sacrificial layer after the second etch.

Semiconductor device having a gate electrode with a top peripheral portion and a top central portion, and the top peripheral portion is a protrusion or a depression surrounding the top central portion

Various embodiments of the present disclosure are directed towards a method for opening a source line in a memory device. An erase gate line (EGL) and the source line are formed elongated in parallel. The source line underlies the EGL and is separated from the EGL by a dielectric layer. A first etch is performed to form a first opening through the EGL and stops on the dielectric layer. A second etch is performed to thin the dielectric layer at the first opening, wherein the first and second etches are performed with a common mask in place. A silicide process is performed to form a silicide layer on the source line at the first opening, wherein the silicide process comprises a third etch with a second mask in place and extends the first opening through the dielectric layer. A via is formed extending through the EGL to the silicide layer.

Etch method for opening a source line in flash memory

In some embodiments, the present disclosure relates to an integrated chip (IC). The IC includes a conductive structure disposed within a dielectric structure along a first side of a semiconductor substrate. An insulating structure is disposed along inner sidewalls of the semiconductor substrate. The inner sidewalls of the semiconductor substrate extend through the semiconductor substrate. A blocking layer is disposed along inner sidewalls of the insulating structure. A through-substrate via (TSV) includes a first portion and a second portion. The first portion extends from a second side of the semiconductor substrate to a horizontally-extending surface of the insulating structure that protrudes outward from the inner sidewalls of the insulating structure. The second portion extends from the first portion to the conductive structure and has a maximum width less than that of the first portion.

Through-substrate via formation to enlarge electrochemical plating window

Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip comprises a semiconductor substrate. A semiconductor layer is disposed over the semiconductor substrate. An insulating structure is buried between the semiconductor substrate and the semiconductor layer. The insulating structure has a first region and a second region. The insulating structure has a first thickness in the first region of the insulating structure, and the insulating structure has a second thickness different than the first thickness in the second region of the insulating structure.

Semiconductor on insulator having a semiconductor layer with different thicknesses

A semiconductor structure and forming method thereof are provided. A substrate includes a first region, a second region, and a boundary region defined between the first region and the second region. An isolation structure is disposed in the boundary region. An upper surface of the isolation structure has a stepped profile. A first boundary dielectric layer and a second boundary dielectric layer are disposed over the isolation structure. The first boundary dielectric layer is substantially conformal with respect to the stepped profile of the isolation structure.

Semiconductor structure and forming method thereof

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Hsinchu, Taiwan

Ming Chyi Liu