Taiwan Semiconductor Manufacturing Comp. Ltd.

King Yuan Electronics Co, Ltd.

Ming-Chin Tsai

Chung-En Kao

You-Hua Chou

Chih-Tsung Lee

Victor Y Lu

Bo-Hung Lin

Ming-Shiou Kuo

Chin-Hsiang Lin

Chen-Chia Chiang

Shiu-Ko JangJian

Chun-Yi Lee

Hung Jui Chang

Chia-Ho Chen

Huan-Wen Lai

Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.

Magnetic structure for metal plating control

A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.

PVD apparatus and method with deposition chamber having multiple targets and magnets

An apparatus comprises: a shower head having a supply plenum for supplying the gas to the chamber and a vacuum manifold fluidly coupled to the supply plenum; and at least one vacuum system fluidly coupled to the vacuum manifold of the shower head.

Shower head apparatus and method for controlling plasma or gas distribution

Among other things, one or more systems and techniques for promoting metal plating uniformity are provided. An insulator plate is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. The insulator plate comprises an insulator ring that provides a resistance to electrical plating current passing through the insulator ring to the semiconductor wafer. The insulator plate comprises one or more porous regions, such as holes, that introduce little to no additional resistance to electrical plating current passing through such porous regions to the semiconductor wafer. The insulator plate influences electrical plating current so that edge plating current has a current value similar to a center plating current. The similarity in plating current promotes metal plating uniformity for the semiconductor wafer.

Insulator plate for metal plating control

The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.

Shielding design for metal gap fill

In some embodiments, the present disclosure relates to a plasma processing system configured to form a symmetric plasma distribution around a workpiece. In some embodiments, the plasma processing system comprises a plurality of coils symmetrically positioned around a processing chamber. When a current is provided to the coils, separate magnetic fields, which operate to ionize the target atoms, emanate from the separate coils. The separate magnetic fields operate upon ions within the coils to form a plasma on the interior of the coils. Furthermore, the separate magnetic fields are superimposed upon one another between coils to form a plasma on the exterior of the coils. Therefore, the disclosed plasma processing system can form a plasma that continuously extends along a perimeter of the workpiece with a high degree of uniformity (i.e., without dead spaces).

Multi coil target design

The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.

Chemical vapor deposition film profile uniformity control

A method for determining disposition of via hole on printed circuit board (PCB) includes the steps of: providing a PCB on which is disposed with a geometric layout and a via hole; providing a line on the PCB for intersecting the geometric layout to form a plurality of points of intersection; defining line segments by segmenting the line at each of the points of intersection to form a plurality of line segments; deleting some of the line segments having one end not being point of intersection for the geometric layout to form a plurality of segmented regions; searching a closed region by repeatedly searching region from any one of the points in the plurality of segmented regions; determining whether a closed region is a smallest closed region; determining whether a via hole is located within the smallest closed region.

Method and apparatus for determining disposition of via hole on printed circuit board

A method for wafer analysis with artificial neural network and the system thereof are disclosed. The method of the system of the present invention has several steps, including: first of all, providing a test unit for wafer test and generating a plurality of test data; next, transmitting the test data to a processing unit for transferring to output data; then, comparing the output data with predictive value and modifying bias and making the output data close to the predictive value, and repeating the steps mentioned above to train this system; finally, analyzing wafers by the trained system. Using this system to analyze wafers not only saves time, but also reduces manpower and the risk resulting from artificial analysis.

Method for wafer analysis with artificial neural network and system thereof

A method for designing stacked pattern of PCB utilizing genetic algorithm and the system thereof are disclosed. The method comprises the following steps: First of all, information data of stacked pattern is inputted into operational interface of the software; Next, initial solution sets of stacked pattern are generated; Then, duplications of the initial solution sets of stacked pattern are generated according to a fitness function; Afterward, crossover of the duplications of stacked pattern are performed at random; Then, mutations are executed by a probability at random; Finally, identification is performed to check if the solution approaches the standard of demand and the result of stacked pattern is shown; otherwise, operational step jumps to duplicate step and repeats above steps until satisfying solution is obtained. The most suitable way for package can be arranged out through making especially mathematical calculations by the system efficiently.

Growing community of inventors

Hsinchu, Taiwan

Ming-Chin Tsai