Au Optronics Corporation

Ming-Chin Hung

Wei-Ting Lin

Jiun-Jye Chang

Po-Tsun Liu

Han-Ping D Shieh

Po-Lun Chen

Li-Feng Teng

Chun-Hao Tu

Yi-Teh Chou

Chia-Hsiang Chen

Fu-Hai Li

Chun-Ching Hsiao

A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a gate insulating layer, a source and a drain, a channel layer, and first and second patterned passivation layers. The gate is disposed on the substrate. The gate insulating layer is disposed on the gate. The source and the drain are disposed on the gate insulating layer. The channel layer is disposed above or under the source and the drain, wherein a portion of the channel layer is exposed between the source and the drain. The first patterned passivation layer is disposed on the portion of the channel layer, wherein the first patterned passivation layer includes metal oxide, and the first patterned passivation layer has a thickness ranging from 50 angstroms to 300 angstroms. The second patterned passivation layer covers the first patterned passivation layer, the gate insulating layer, and the source and the drain.

Thin film transistor having a patterned passivation layer

A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.

Semiconductor structure and fabricating method thereof

Growing community of inventors

Nantou County, Taiwan

Ming-Chin Hung