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National Taipei University of Technology

Ming-Chi Kan

Chien-Min Sung

Sea-Fue Wang

Shao-Chung Hu

Shea-Jue Wang

Shao Chung Hu

Jui-Chen Pu

Yu-Chuan Wu

Chia-Lun Lin

Fu-Ting Hsu

Kai-Hung Hsu

Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/&#xb0; C.

Stress regulated semiconductor devices and associated methods

Method for production of diamond-like carbon film having semiconducting properties comprises preparing a boron-doped diamond-like carbon (B-DLC) thin film on a silicon substrate through a radio frequency magnetron sputtering process, wherein a composite target material formed by inserting boron tablet as a dopant source in a graphite target is used. After forming a boron-containing diamond-like carbon film, the thin film is annealed at a temperature of 500&#xb0; C. and kept at this temperature for 10 minutes, and determine its carrier concentration and resistivity. Thus demonstrated that the polarity of said boron-doped diamond-like carbon film is p-type semiconductor characteristic. Carrier concentration can be up to 1.3&#xd7;1018 cm-3, and its resistivity is about 0.6 &#x3a9;-cm; consequently. The boron-doped semiconducting diamond-like carbon film having excellent semiconductor property and high temperature stability according to the invention is best applicable in solar cell or electronic communication and electrode elements and equipments.

Method for production of diamond-like carbon film having semiconducting property

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Rende, Italy

Ming-Chi Kan