Epistar Corporation

Ming-Chi Hsu

Min-Hsun Hsieh

Chun-Hung Liu

Shih-An Liao

Been-Yu Liaw

Chiu-Lin Yao

Chien-Liang Liu

Chih-Ming Wang

Wei-Chiang Hu

Yu-His Sung

Tsung-Xian Lee

Shau-Yi Chen

Yi-Jui Huang

Po-Hung Lai

Po-Chang Chen

Chien-Yuan Wang

Ching-Tai Cheng

Yih-Hua Renn

Lung-Kuan Lai

Jhih-Sian Wang

Jen-Chieh Yu

Kuang-Ping Chao

Ru-Shi Liu

Zhi-Ting Ye

Han-Min Wu

Steve Meng-Yuan Hong

Jia-Tay Kuo

Sheng-Che Chiou

Cheng-Teng Ye

Yao Chiu Lin

Yu-Hsi Sung

Yu Chen Liao

Schang-Jing Hon

Hsin-Ying Wang

Chien-Kai Chung

Ai-Sen Liu

Wei-Chih Peng

Cheng-Nan Han

Yen-Chih Chen

Hsing-Chao Chen

Hung-Hsuan Chen

Chun-Kai Wang

Masafumi Sano

Chun-Che Lin

Chun Che Lin

Meng-Yuan Hong

Ling-Ling Wei

Pei-Lun Chien

Wei-Yu Yen

Yi-Jui Hung

Chang Ju Ho

Zhi-ting Ye

The present application discloses a light-emitting device comprises a semiconductor light-emitting element, a transparent element covering the semiconductor light-emitting element, an insulating layer which connects to the transparent element, an intermediate layer which connects to the insulating layer; and a conductive adhesive material connecting to the intermediate layer.

Light-emitting device and the method of manufacturing the same

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

Semiconductor device and a method of manufacturing thereof

This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a second side, a first electrode part disposed near the first side and extending to the second side, a bended part disposed near to the second side and spaced apart from the first electrode part, and a second electrode part extending from the bended part to the first side. No light-emitting diode unit is arranged on the second electrode part.

Light emitting bulb

A light-emitting module includes a common carrier; a plurality of semiconductor devices formed on the common carrier, and each of the plurality of semiconductor devices including three semiconductor dies; a carrier including a connecting surface; a third bonding pad and a fourth bonding pad formed on the connecting surface; and a connecting layer. One of the three semiconductor dies includes a stacking structure; a first bonding pad; and a second bonding pad with a shortest distance less than 150 microns between the first bonding pad. The connecting layer includes a first conductive part including a first conductive material having a first shape; and a blocking part covering the first conductive part and including a second conductive material having a second shape with a diameter in a cross-sectional view. The first shape has a height greater than the diameter.

An embodiment of present disclosure discloses a light-emitting device which includes a light-emitting unit, a transparent covering structure, a first reflective structure, a second reflective structure, and a wavelength conversion structure. The light-emitting unit includes a light-emitting surface, a bottom surface opposite to the light-emitting surface, a side surface, a first conductive electrode, and a second conductive electrode. The first conductive electrode and the second conductive electrode are located on the bottom surface. The transparent covering structure covers the light-emitting surface and the side surface. The first reflective structure surrounds the transparent covering structure. The second reflective structure is disposed under the first reflective structure and surrounds the first conductive electrode and the second conductive electrode. The wavelength conversion structure is disposed on the first reflective structure and the transparent covering structure.

Light-emitting device with wavelength conversion structure

The invention discloses a light-emitting device and a manufacturing method thereof. The light-emitting device comprising: a light-emitting unit, the light-emitting unit comprises a non-light-emitting element and a light-emitting diode; a reflective layer covering the non-light-emitting element; a light-transmitting layer covering the reflective layer and the light-emitting diode; a metal connection layer electrically connecting the non-light-emitting element and the light-emitting diode.

Light emitting device and manufacturing method thereof

This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack with a first (top) surface, a bottom surface and at least one side surface connected to the first surface and the bottom surface, a light-reflective enclosure with a second (top) surface, a contact electrode formed on the bottom surface of the light-emitting layer, and a wavelength converting layer. Moreover, the light-reflective enclosure surrounds the side surface of the light-emitting stack and exposes to the first surface. The wavelength converting layer covers the first surface and the second surface. In addition, the second surface has a plurality of fine concave structures distributed on the second surface.

Light-emitting device and manufacturing method thereof

A light-emitting device includes a light body having an internal electrode layer, and a conductive layer. The conductive layer has a first portion formed on the internal electrode layer and overlapping the light body in a first direction, and a second portion overlapping the light body in a second direction. The first direction is perpendicular to the second direction.

Light-emitting device

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stacking structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface; and a conductive connecting layer comprising a first conducting part, comprising a first outer boundary, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conducting part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conducting part.

A light-emitting device includes a light-emitting structure with a side surface, and a reflective layer covering the side surface. The light-emitting structure has a first light-emitting angle and a second light-emitting angle. The difference between the first light-emitting angle and the second light-emitting angle is larger than 15&#xb0;.

Light-emitting device having dissimilar first and second light-emitting angles

Light emitting unit

Growing community of inventors

Hsinchu, Taiwan

Ming-Chi Hsu