Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming-Cheng Syu

Yung-Chow Peng

Wen-Shen Chou

Po-Zeng Kang

Yung-Hsu Chuang

Shu-Chin Tai

A method of manufacturing a semiconductor device includes forming M_1st segments in a first metallization layer including: forming first and second M_1st segments for which corresponding long axes extend in a first direction and are substantially collinear, the first and second M_1st segments being free from another instance of M_1st segment being between the first and second M_1st segments; and (A) where the first and second M_1st segments are designated for corresponding voltage values having a difference equal to or less than a reference value, separating the first and second M_1st segments by a first gap; or (B) where the first and second M_1st segments are designated for corresponding voltage values having a difference greater than the reference value, separating the first and second M_1st segments by a second gap, a second size of the second gap being greater than a first size of the first gap.

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Hsinchu, Taiwan

Ming-Cheng Syu