Taiwan Semiconductor Manufacturing Comp. Ltd.

Ming Che Li

Cheng-Ming Lin

Hao-Ming Chang

Chung-Yang Huang

Yi-Hsuan Lin

Yu-Hsin Hsu

Wang Cheng Shih

Kuan-Shien Lee

Wei-Hsin Lin

Po-Cheng Lai

A method for forming a semiconductor device includes receiving a substrate having a first opening and a second opening formed thereon, wherein the first opening has a first width, and the second opening has a second width less than the first width; forming a protecting layer to cover the first opening and expose the second opening; performing a wet etching to widen the second opening with an etchant, wherein the second opening has a third width after the performing of the wet etching, and the third width of the second opening is substantially equal to the first width of the first opening; and performing a photolithography to transfer the first opening and the second opening to a target layer.

Method for forming semiconductor device

A method for forming a photomask includes receiving a substrate having a first layer formed thereon, wherein a patterned second layer exposing portions of the first layer is disposed over the substrate, removing the exposed portions of the first layer through the patterned second layer to form a plurality of openings in the first layer, removing the patterned second layer, and performing a wet etching to remove portions of the first layer to widen the plurality of openings with an etchant. The etchant is in contact with a top surface of the first layer and sidewalls of the plurality of openings. Each of the plurality of openings has a first width prior to the performing of the wet etching and a second width after the performing of the wet etching. The second width is greater than the first width.

Photomask and method for forming the same

An electron filter for trapping dissociated electrons in an ion implantation chamber. The electron filter typically includes at least one filter element which is connected to a voltage source for applying a positive voltage to the filter element. During an ion implantation process, dissociated electrons are drawn from the interior of the chamber and trapped in the filter element to prevent or reduce contamination of the substrates.

Electron filter for current implanter

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Hsinchu, Taiwan

Ming Che Li