Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Ming-Che Chen

Kuo-Hua Pan

Ta-Chun Lin

Chun-Jun Lin

Jhon Jhy Liaw

Jhon-Jhy Liaw

Ming-Hsien Lin

Chun-Yu Chen

Wei-Chen Liao

Yu-Chang Liang

Jyun-Yang Shen

Wen-Tane Liao

Hai-Lin Lee

A method for manufacturing a semiconductor device is provided. The method includes forming first and second semiconductor fins; forming first and second gate structures respectively over first regions of the first and second semiconductor fins; forming a first dummy spacer at a sidewall of the first gate structure adjacent a second region of the first semiconductor fin; etching a first source/drain recess in the second region of the first semiconductor fin; forming a n-type source/drain epitaxial structure in the first source/drain recess; forming a second dummy spacer at a sidewall of the second gate structure adjacent a second region of the second semiconductor fin, wherein the second dummy spacer has a thickness less than that of the first dummy spacer; etching a second source/drain recess in the second region of the second semiconductor fin; and forming a p-type source/drain epitaxial structure in the second source/drain recess.

Semiconductor device and manufacturing method thereof

A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a substrate. The method includes forming a spacer structure over a sidewall of the gate stack. The method includes forming a source/drain structure in and over the substrate, wherein a portion of the spacer structure is between the source/drain structure and the gate stack. The method includes partially removing the outer layer, wherein a first lower portion of the outer layer remains between the source/drain structure and the gate stack. The method includes partially removing the middle layer, wherein a second lower portion of the middle layer remains between the source/drain structure and the gate stack.

Semiconductor device structure and method for forming the same

A method of processing a semiconductor wafer is provided. The method includes installing upper lid. The installation of the upper lid includes placing an inlet manifold on a water box; inserting a jig into a lower gas channel in the water box and inserting into an upper gas channel in the inlet manifold; fastening the water box to the inlet manifold; and removing the jig after the water box engaging with the inlet manifold. The method also includes connecting a shower head on a lower side of the water box; and connecting the upper lid to a housing. The method further includes placing a semiconductor wafer into the housing. In addition, the method includes supplying a process gas over the semiconductor wafer through the upper gas channel, the lower gas channel and the shower head.

Semiconductor fabrication tool having gas manifold assembled by jig

An adjustable weight lifting machine includes a bench board adjustably secured on a bench frame by adjustably engaging a locking bolt pivotally secured with the bench board with a corresponding pair of bolt holes formed in the bench frame adapted for a proper seating or sleeping by a trainee or user on the bench board, and a plurality of weights slidably held on two guiding rods having a pair of reinforcing ribs, each rib securing each rod to a supporting column of the machine having each weight formed with two side notches in two opposite side portions of the weight so as to be freely reciprocated on the guiding rods without being obstructed by the two reinforcing ribs secured on the rods.

Adjustable weight lifting machine

Growing community of inventors

Taipei, Taiwan

Ming-Che Chen