Powerchip Semiconductor Manufacturing Corporation

Powerchip Technology Corporation

Ming-Chang Tsai

Chun-Yi Tu

Jui-Lung Weng

A method of compensating charge loss and source line bias in programing of non-volatile memory device including the steps of reading a previous program page with a low reference voltage to make an original previous program pattern, merging the original previous program pattern and a current program pattern to make a merged program pattern, reading the previous program page with a high reference voltage to make a verified previous program pattern, and merging the verified previous program pattern and the merged program pattern to make a compensated current program pattern.

Method of compensating charge loss and source line bias in programing of non-volatile memory device

A non-volatile memory device and an error compensation method for verifying the same are provided. The non-volatile memory device includes a memory block, a word line driver, a bit line circuit and a controller. The memory block includes multiple memory cells. After a first programming process and a first verification process are performed on the memory cells, the controller performs reverse reading to the control terminals of the memory cells, applies a preset voltage to the control terminals of the memory cells according to preset programming data by using the word line driver, reads data from the memory cells by using the bit line circuit, and determines whether the data of each memory cell is normal according to the data read from the memory cells. When the data of specific memory cells is not normal, the controller performs a second programming process to the specific memory cells.

Growing community of inventors

Hsinchu County, Taiwan

Ming-Chang Tsai