Atomic Energy Council-institute of Nuclear Energy Research

Emory University

Ming-Chang Lin

Shan-Ming Lan

Jyh-Perng Chiu

Tsong-Yang Wei

Tsun-Neng Yang

Ming-Chao Kuo

Yen-Chang Tzeng

Li-Fu Lin

Der-Jhy Shieh

Wei-Yang Ma

Chi-Shen Lee

Yuan-Pern Lee

Wei-Guang Diau

Guy D Gilliland

The present invention is a photosensitized electrode which absorbs sunlight to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.

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The present invention is a photosensitized electrode which absorbs sun light to obtain pairs of separated electron and hole. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resistance and is fitted to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.

A distribution layer of silicon quantum dots are fabricated. After the layer is exposed to sun light for a while, the layer absorbs energy and produces pairs of electron and hole. By limiting the movement of the electrons and their moving directions through the structure obtained, the efficiency of an optoelectronic conversion is enhanced.

Method for fabricating optical sensitive layer of solar cell having silicon quantum dots

A semiconductor device is constructed of at least one indium nitride or indium nitride alloy nanostructure on a substrate or other thing film layer. The method used to create the semiconductor device involves illuminating the substrate with a lateral intensity patterning of ultraviolet light in the presence of at least hydrazoic acid and a compound containing indium gas flows. Additionally, a semiconductor light-emitting/detecting modulating device composed of at least one indium nitride or indium nitride alloy nanostructure. The method used to create the semiconductor light-emitting/detecting modulating device involves embedding at least one nanostructure in the interior layer of the device. Further, a monolithic photovoltaic-photoelectrochemical device where one layer is composed of an indium nitride or indium nitride alloy film or nanostructure.

Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots

Growing community of inventors

Atlanta, GA, United States of America

Ming-Chang Lin