Innolux Corporation

Ming-Chang Lin

Tzu-Min Yan

Kuan-Feng Lee

Tsau-Hua Hsieh

Chun-Hsien Lin

Tung-Kai Liu

Hui-Chieh Wang

Chandra Lius

Wei-Cheng Chu

Ting-Kai Hung

Shun-Yuan Hu

Ying-Tong Lin

Ming-I Chao

Shu-Ming Kuo

Yun-Sheng Chen

Yu-Hsin Liu

Chao-Yi Hung

Jui-Feng Ko

Chih-Wei Ho

Chia-Hsiu Hsu

Chun-Chin Fan

Shun-Fu Chiu

Ching-Hung Teng

Te-Hung Peng

An electronic device and a manufacturing method thereof are provided. The manufacturing method of the electronic device includes the following. A substrate is provided. A plurality of electronic units are transferred to the substrate. The electronic units are inspected to obtain M first defect maps. The M first defect maps are integrated into N second defect maps, where N<M. M repairing groups are provided according to the N second defect maps. Each of the repairing groups includes at least one repairing electronic unit. The M repairing groups are transferred to the substrate. At least two of the repairing groups have the same location distribution of repairing electronic units, and the location distribution is consistent with a defect distribution of one of the second defect maps.

Electronic device and manufacturing method thereof

The disclosure provides a light emitting device and a manufacturing method thereof. The light emitting device includes a substrate, a light emitting element, and a bonding structure. The light emitting element is disposed on the substrate through the bonding structure. The bonding structure includes at least three bonding layers and at least two passivation layers, which are in a staggered arrangement. The method for manufacturing the light emitting device includes the following steps: providing a substrate, forming a first bonding layer on the substrate, forming a first passivation layer on the first bonding layer, providing a light emitting element, forming a second bonding layer on the light emitting element, forming a second passivation layer on the second bonding layer. The second passivation layer on the light emitting element is contacted with the first passivation layer to form a third bonding layer and bond the light emitting element on the substrate.

Light emitting device and manufacturing method thereof

An electronic device and a manufacturing method thereof are disclosed. The manufacturing method of the electronic device includes following steps: providing a substrate; forming a first compressible layer on the substrate; forming a first bonding pad on the first compressible layer; providing an electronic component; forming a second bonding pad on the electronic component; and bonding the electronic component with the substrate by contacting the second bonding pad with the first bonding pad.

A manufacturing method of an electronic apparatus is provided, and the manufacturing method includes following steps. A substrate is provided. A plurality of first bonding pads are formed on the substrate. A plurality of electronic devices are provided, and each of the electronic devices includes at least one second bonding pad. The second bonding pads of the electronic devices corresponding to the first bonding pads are laminated onto the corresponding first bonding pads on the substrate, so as to bond the electronic devices to the substrate. The corresponding first and second bonding pads respectively have bonding surfaces with different surface topographies. The manufacturing method of the electronic apparatus is capable of reducing short circuit during a bonding process or improving a bonding yield.

Manufacturing method of an electronic apparatus

A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

Display device

An electronic device is provided in the present disclosure. The electronic device includes a substrate and a light emitting diode. The light emitting diode is bonded to the substrate through a solder alloy. The solder alloy includes tin and a metal element M, and the metal element M is one of the indium and bismuth. The atomic percentage of tin in the sum of tin and the metal element M ranges from 60% to 90% in the solder alloy.

Electronic device

A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate, and includes a first electrode and a second electrode. The transistor is disposed on the substrate and electrically connected to the light-emitting element. The transistor includes a gate electrode and a semiconductor layer. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The first electrode and the second electrode of the light-emitting element do not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.

A display device is provided. The display device includes a light-emitting unit. The light-emitting unit includes a light-emitting part, wherein a light extraction structure is disposed on a first surface of the light-emitting part. The light-emitting unit also includes a connective part disposed on a second surface opposite to the first surface of the light-emitting part. The light-emitting unit further includes a protective part surrounding the light-emitting part and the connective part. In addition, the display device includes a substrate having a plurality of active elements and at least one bonding pad, wherein the bonding pad is electrically connected to the corresponding connective part of the light-emitting unit. The roughness of the light extraction structure is greater than or equal to 0.2 &#x3bc;m and less than or equal to 5 &#x3bc;m.

A display device includes a substrate, a light-emitting element, and a transistor. The substrate has a top surface. The light-emitting element is disposed on the substrate. The transistor is disposed on the substrate, and includes a drain electrode, a gate electrode, and a semiconductor layer. The drain electrode is electrically connected to the light-emitting element. The semiconductor layer includes an overlapping portion overlapped with the gate electrode. The light-emitting element does not overlap with the overlapping portion along a direction perpendicular to the top surface of the substrate.

Display device and method of manufacturing the display device

A display device is provided. The display device includes a substrate, and a light-emitting unit disposed on the substrate. The light-emitting unit includes a first conductive layer overlapping a second conductive layer, a first semiconductor layer disposed between the first conductive layer and the second conductive layer, a second semiconductor layer disposed between the first semiconductor layer and the first conductive layer, a quantum well structure disposed between the first semiconductor layer and the second semiconductor layer, and a via hole penetrated through the first semiconductor layer and the quantum well structure. The second conductive layer is electrically connected with the second semiconductor layer through a conductive material disposed in the via hole.

Display device and method for forming the same

A light-emitting diode display device includes a light-emitting diode and a substrate. The light-emitting diode includes a central axis, and the substrate includes a first connecting portion and a second connecting portion. The central axis is extended through the first connecting portion. The second connecting portion is disposed outside of the first connecting portion and is spaced apart from the first connecting portion by a distance which is greater than zero, and the first connecting portion and the second connecting portion are respectively electrically connected to the light-emitting diode.

Light-emitting diode display device

A display device is provided, which includes a substrate including a pixel region; a metal oxide semiconductor transistor disposed over the substrate and including: a metal oxide semiconductor layer, a first gate electrode overlapping with the metal oxide semiconductor layer; and a gate insulating layer disposed between the metal oxide semiconductor layer and the first gate electrode, and the gate insulating layer having a first opening, wherein the first opening and the pixel region overlap; a second insulating layer disposed over the metal oxide semiconductor layer and having a via and a second opening, wherein the second opening and the pixel region overlap; and a pixel electrode electrically connected to the metal oxide semiconductor layer through the via.

A display device includes a substrate, a first transistor, a second transistor and a conductive connection portion disposed on the substrate. The first transistor is electrically connected to the gate electrode of the second transistor through the conductive connection portion. An insulating layer is disposed on the conductive connection portion. A pixel electrode is disposed on the insulating layer and is electrically connected to the second transistor. The pixel electrode is at least partially overlapped with the conductive connection portion. A light-emitting element is disposed on the pixel electrode. The conductive connection portion and the pixel electrode form a capacitor. The capacitor has an equivalent permittivity and a thickness. The ratio of the equivalent permittivity to the thickness is in a range from 0.4*(1E+5)F/m^2 to 296.48*(1E+5)F/m^2.

A display device including a TFT substrate and a display layer is provided. The TFT substrate includes a substrate, a gate layer, a semiconductor layer, a gate dielectric layer, a first electrode layer, a first passivation layer, a second passivation layer, and a second electrode layer. A via penetrates the first passivation layer and the second passivation layer to expose a portion of the first electrode layer, and the via has a sidewall. The second electrode layer is electrically connected to the first electrode layer through the via, the first passivation layer has a first edge on the sidewall of the via, the second passivation layer has a second edge on the sidewall of the via, and the first edge and the second edge are separated by a distance in the range of 500-2000 &#x212b;.

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Miao-Li County, Taiwan

Ming-Chang Lin