Canon Kabushiki Kaisha

Conon Kabushiki Kaisha

Mineo Shimotsusa

Takeshi Ichikawa

Masahiro Kobayashi

Yasuhiro Sekine

Masatsugu Itahashi

Kei Fujita

Yusuke Onuki

Fumihiro Inui

Genzo Momma

Nobuaki Kakinuma

Masato Fujita

Taro Kato

Takanori Watanabe

Kenji Makino

Hiroshi Yuzurihara

Yukihiro Hayakawa

Hideshi Kuwabara

Tetsuo Asaba

Yutaka Akino

Shunsuke Takimoto

Seiji Kamei

Yutaka Yuge

Mahito Shinohara

Koichiro Iwata

Hajime Ikeda

Ryuichi Mishima

Hiroaki Naruse

Kazunari Kawabata

Yuzo Kataoka

Hiroaki Sano

Hiraku Kozuka

Takehito Okabe

Sadayoshi Sakuma

Shigeru Nishimura

Soichiro Nagamochi

Takumi Ogino

Hiroyasu Nomura

Takashi Morii

Keita Torii

Kentarou Suzuki

Shinya Iwahashi

Yoshihisa Kabaya

Yoshiyuki Imanaka

Yuichiro Yamashita

Ichiro Saito

Takaaki Yamaguchi

Takuya Hatsui

Souta Takeuchi

Muga Mochizuki

Kousuke Kubo

Takeshi Kojima

Takehiko Soda

Hiroshi Echizen

Seiichi Tamura

Akira Ohtani

Takashi Usui

Osamu Iketa

Masahiro Koboyashi

Taskashi Usui

Yuzo Kayaoka

A liquid ejection head including a base substrate, an ejection port to eject a liquid, a heating element formed above the base substrate that heats the liquid to eject the liquid from the ejection port, a temperature detection element formed above the base substrate that detects a temperature of the liquid, a wiring layer connected to the heating element, a protective layer formed on the base substrate that protects the heating element and the wiring layer from the liquid, and a liquid supply port that penetrates the base substrate and supplies the liquid to the ejection port. When viewed in a direction perpendicular to the base substrate, the temperature detection element is disposed between the heating element and the liquid supply port, and the temperature detection element is formed on the protective layer.

Liquid ejection head

A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.

Solid-state imaging device and imaging system

A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.

Solid-state image pickup device

A print element substrate, comprising a base, a heater provided on the base and configured to generate heat used to discharge ink, a flow path member, which forms an ink flow path, configured to form, together with the base, a bubbling chamber in which the ink is bubbled by the heat of the heater provided in a bottom surface of the bubbling chamber, and a temperature sensor capable of detecting a temperature of the bubbling chamber, the temperature sensor being formed of the same material as the heater and provided in the same layer as the heater on the base.

Print element substrate, printhead, and printing apparatus

A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

Solid-state imaging device and manufacturing method therefor

A highly reliable multilayer structure element substrate according to an embodiment of this present invention comprises: an electrothermal transducer; a temperature detection element formed at a position where the temperature detection element at least partially overlaps the electrothermal transducer in a planar view of the element substrate; and a plurality of wirings connected to the temperature detection element, wherein the temperature detection element can detect temperatures in a plurality of regions when a plurality of different wirings out of the plurality of wirings are selected.

Element substrate, liquid discharge head, and printing apparatus

A liquid discharge head, comprising an insulating member arranged on a substrate, a resistive heating element arranged in the insulating member and configured to generate thermal energy used to discharge a liquid, a bubble chamber provided above the insulating member and configured to generate bubbles of the liquid based on the thermal energy, and a temperature detection element capable of detecting a temperature in the bubble chamber, wherein the temperature detection element is arranged between the resistive heating element and the bubble chamber and in a conductive layer closest to the bubble chamber in a plurality of conductive layers provided with respect to the insulating member.

Liquid discharge head and liquid discharge device

A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.

Photoelectric conversion device, image pickup system and method of manufacturing photoelectric conversion device

An element substrate has a layered structure including a heating resistance element, a first insulation layer where a temperature detection element constituted by a via is formed, and a second insulation layer provided between the heating resistance element and the temperature detection element which electrically insulates the heating resistance element and the temperature detection element.

Element substrate, liquid ejection head, and method of manufacturing element substrate

A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite side of one of the members from the semiconductor substrate, such that only the associated photoelectric conversion unit is shielded from light. In the solid-state image pickup device, the holes are simultaneously formed and the members are simultaneously formed.

Solid-state image pickup device and method of making the same

A method of manufacturing a solid-state image sensor, includes forming a first isolation region of a first conductivity type in a semiconductor layer having first and second surfaces, the forming the first isolation region including first implantation for implanting ions into the semiconductor layer through the first surface, forming charge accumulation regions of a second conductivity type in the semiconductor layer, performing first annealing, forming an interconnection on a side of the first surface of the semiconductor layer after the first annealing, and forming a second isolation region of the first conductivity type in the semiconductor layer, the forming the second isolation region including second implantation for implanting ions into the semiconductor layer through the second surface. The first and second isolation regions are arranged between the adjacent charge accumulation regions.

Solid-state image sensor and method of manufacturing the same

A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different from the copper is located at least between a first region and the first semiconductor layer, between the first region and the first insulator layer, and between the first region and the third insulator layer. A diffusion coefficient of the copper to a material is lower than a diffusion coefficient of the copper to the first semiconductor layer and a diffusion coefficient of the copper to the first insulator layer.

Semiconductor apparatus

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Machida, Japan

Mineo Shimotsusa