Rohm Co., Ltd.

Nissan Motor Company Limited

Mineo Miura

Noriaki Kawamoto

Masashi Hayashiguchi

Takayuki Kitou

Satoshi Tanimoto

Yuki Nakano

Shuhei Mitani

Jun Terada

Keiji Okumura

Tetsuya Hayashi

Hideaki Tanaka

Takashi Nakamura

Masatoshi Aketa

Masakatsu Hoshi

Yoshio Shimoida

Shigeharu Yamagami

Katsuhisa Nagao

Kazuhide Ino

Hidetoshi Abe

A semiconductor device includes a first terminal for a battery, a second terminal for an inverter circuit, and a transistor. The semiconductor device is configured to control a voltage applied to a control terminal of the transistor to allow supply of a current from the first terminal to the second terminal and allow supply of a current from the second terminal to the first terminal. A withstand voltage between the first terminal and the second terminal is greater than or equal to a voltage between the battery and the inverter circuit.

Semiconductor device, semiconductor module, relay unit, battery unit, and vehicle

A semiconductor unit is arranged between a motor and an inverter circuit that controls the motor. The semiconductor unit includes a transistor and a controller. The transistor is arranged between the inverter circuit and a positive electrode of a battery that supplies power to the inverter circuit, and controls supplying of power from the battery to the inverter circuit. The controller is connected to a control terminal of the transistor, and controls a control voltage that is a voltage applied to the control terminal. When power starts to be supplied from the battery to the inverter circuit, the controller controls the control voltage to intermittently operate the transistor and also decreases the control voltage, which is applied to the control terminal of the transistor, to be lower than the control voltage at which the transistor is fully activated.

Semiconductor unit, battery unit, and vehicle

A semiconductor unit includes a semiconductor device, a controller, and a resistor. The semiconductor device includes a transistor arranged between a positive electrode of a battery and an inverter circuit electrically connected to the battery. The controller is connected to a control terminal of the transistor and configured to control the transistor. The resistor arranged between the control terminal and the controller. The controller controls the transistor so that when a current flowing to the transistor is greater than or equal to a threshold value, the transistor is deactivated. The resistor has a resistance value that is greater than or equal to 100 Ω.

Semiconductor unit, semiconductor device, battery unit, and vehicle

A method for producing a semiconductor power device, includes forming a gate trench from a surface of a semiconductor layer toward an inside thereof. A first insulation film is formed on an inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiOis formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.

Semiconductor device VDMOS having a gate insulating film having a high dielectric constant portion contacting the drift region for relaxing an electric field generated in the gate insulating film

A semiconductor device according to the present invention includes a semiconductor layer, a trench formed selectively in an obverse surface portion of the semiconductor layer and defining a unit cell of predetermined shape in the obverse surface portion, a second conductivity type layer formed to conform to a portion or an entirety of an inner surface of the trench, an obverse surface layer of a first conductivity type formed so as to be exposed from an obverse surface of the semiconductor layer in the unit cell, a reverse surface layer of the first conductivity type formed so as to be exposed from a reverse surface of the semiconductor layer, a drift layer of the first conductivity type formed between the obverse surface layer and the reverse surface layer of the semiconductor layer and being of lower concentration than the obverse surface layer and the reverse surface layer, a first electrode contacting the obverse surface layer and forming an ohmic contact with the obverse surface layer, and a second electrode contacting the reverse surface layer and forming an ohmic contact with the reverse surface layer.

Semiconductor device

When an overcurrent is detected by an overcurrent detecting circuit (), a first switch circuit () selects a second input terminal (b) and connects an output terminal (c) to the second input terminal (b), with the result that the output terminal (c) of the first switch circuit () is put into a high-impedance state. The second switch circuit () selects a second output terminal (f) and connects an input terminal (d) to the second output terminal (f), with the result that the input terminal (d) of the second switch circuit () is grounded. That is, the gate of a first MOSFET () is grounded via a current interrupting resistor (). The resistance value of the current interrupting resistor () is set so that, at the time of a current interruption, a time interval from a time when the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature characteristics of the on-resistance of the switching device become negative to a time when the drain current or collector current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less.

Electronic circuit

A semiconductor device includes a first conductive-type semiconductor layer, a second conductive-type body region formed in a surficial portion of the semiconductor layer, a first conductive-type source region formed in a surficial portion of the body region, a gate insulating film provided on the semiconductor layer and containing nitrogen atoms, the gate insulating film including a first portion in contact with the semiconductor layer outside the body region, a second portion in contact with the body region, and a third portion in contact with the source region, and a gate electrode provided on the gate insulating film in an area extending across the semiconductor layer outside the body region, the body region, and the source region. The third portion of the gate insulating film has a thickness greater than the thickness of the first portion and the thickness of the second portion.

Semiconductor device and manufacturing method for same

A method for producing a semiconductor device () is disclosed. The semiconductor device () includes: 1) a semiconductor substrate (), 2) a hetero semiconductor area () configured to contact a first main face (A) of the semiconductor substrate () and different from the semiconductor substrate () in band gap, 3) a gate electrode () contacting, via a gate insulating film (), a part of a junction part () between the hetero semiconductor area () and the semiconductor substrate (), 4) a source electrode () configured to connect to the hetero semiconductor area (), and 5) a drain electrode () configured to make an ohmic connection with the semiconductor substrate (). The method includes the following sequential operations: i) forming the gate insulating film (); and ii) nitriding the gate insulating film ().

Method for producing semiconductor device

A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type; source regions of the first conductivity type, formed on a surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed, the inside surface of the trenches are covered by a gate insulating film, and the gate electrodes comprise surface-facing parts, which are buried in the trenches.

An AC switch includes a first compound semiconductor MOSFET and a second compound semiconductor MOSFET whose sources are connected with each other, a first output terminal connected to the drain of the first compound semiconductor MOSFET, and a second output terminal connected to the drain of the second compound semiconductor MOSFET. The withstand voltage between the first output terminal and the second output terminal in an off state is not less than 400 V. The resistance between the first output terminal and the second output terminal in an on state is not more than 20 m&#x3a9;.

AC switch having compound semiconductor MOSFETs

A silicon carbide semiconductor device (), includes: 1) a silicon carbide substrate (); 2) a gate electrode () made of polycrystalline silicon; and 3) an ONO insulating film () sandwiched between the silicon carbide substrate () and the gate electrode () to thereby form a gate structure, the ONO insulating film () including the followings formed sequentially from the silicon carbide substrate (): a) a first oxide silicon film (O) (), b) an SiN film (N) (), and c) an SiN thermally-oxidized film (O) (,,). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) () and in a vicinity of the silicon carbide substrate (), and ii) in an interface between the silicon carbide substrate () and the first oxide silicon film (O) ().

Silicon carbide semiconductor device and method for producing the same

A silicon carbide semiconductor device (), includes: 1) a silicon carbide substrate (); 2) a gate electrode () made of polycrystalline silicon; and 3) an ONO insulating film () sandwiched between the silicon carbide substrate () and the gate electrode () to thereby form a gate structure, the ONO insulating film () including the followings formed sequentially from the silicon carbide substrate (): a) a first oxide silicon film (O) (), b) an SiN film (N) (), and c) an SiN thermally-oxidized film (O) (). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) () and in a vicinity of the silicon carbide substrate (), and ii) in an interface between the silicon carbide substrate () and the first oxide silicon film (O) ().

A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type, each formed in a region extending from the surface of the semiconductor layer to a halfway portion of the same in the thickness direction, and each spaced apart from each other in a direction perpendicular to the thickness direction; source regions of the first conductivity type, each formed on the surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed by digging from the source of the semiconductor layer, the inside surface of the trenches are covered by the gate insulating film, and the gate electrodes comprise surface-facing parts, which face the surface of the semiconductor layer, and buried parts, which are buried in the trenches.

Growing community of inventors

Kyoto, Japan

Mineo Miura