Sony Corporation

Other

Minehiro Tonosaki

Eisaku Kato

Masato Kobayashi

Motosuke Ohmi

Seiichi Watanabe

Naoki Sano

Kenji Shinozaki

Minoru Kohno

Hiroyuki Mitsuhashi

Koji Kitagawa

Goro Fujita

Hiroyuki Wada

Takuya Makino

Hiroyuki Okita

Takashi Yajima

Masakazu Yajima

Michio Oka

Koichi Ikeda

Shun Mitarai

Nobuhiko Umezu

Yutaka Takei

Mitsunori Ueda

Akiyoshi Chayahara

Yuji Horino

Nobuteru Tsubouchi

Atsushi Kinomura

A high frequency device having a membrane structure with improved mechanical strength is provided. The high frequency device includes: a substrate having an aperture; a first dielectric layer that is formed from a material having etching selectivity in relation to a material of the substrate and is provided on the substrate to cover the aperture; a second dielectric layer on the first dielectric layer; and a high frequency element provided in a position opposed to the aperture on the second dielectric layer.

High frequency device

A heat transport device having a composite structure that is readily manufactured and a method for manufacturing such a heat transport device are provided. The heat transport device includes a first base plate having a liquid suction and retention unit for sucking and retaining a liquid-phase working fluid by capillary force; a second base plate having a face provided with a first concavity functioning as a vaporization chamber for vaporizing the working fluid, a second concavity functioning as a liquefaction chamber for liquefying the working fluid, a first ditch for transporting the vaporized working fluid, a second ditch for transporting the liquefied working fluid, the second base plate comprising a material having a thermal conductivity lower than that of silicon; and a thermoplastic or thermosetting resin material for bonding the first and second base plates. The heat transport device can be readily manufactured by heating the first and second base plates sandwiching a thermoplastic or thermosetting resin material therebetween.

Heat transport apparatus and heat transport apparatus manufacturing method

This invention provides a cooler having an excellent cooling performance, which is capable of being downsized and low-profiled, an electronic apparatus and a method for fabricating the cooler. The cooler () comprises lower board member () and upper complex board members. The lower board member () is made from plastic material and has a cavity portion () for allowing water or vapor to be circulated therein. The upper complex board members comprise board member () for a condenser part, upper board member (), and board member () for a wick part. The board members () and () for the condenser part and the wick part, respectively, are made from metallic material having higher thermal conductivity such as copper and nickel. Each of the members has a groove for allowing them to be served as the condenser and the wick. The upper board member () includes an opening () or () for allowing the board member () or () for the condenser part or the wick part to be incorporated, and a hollow () for heat insulation.

Cooler, electronic apparatus, and method for fabricating cooler

A compact, thin type and high cooling performance cooling device, an electronic apparatus and a method of manufacturing the same are provided. The cooling device () has a pair of a first substrate () and a second substrate () which are made of such a material having a low thermal diffusibility as glass, formed rectangular and bonded together via a silicon member (). On bonding surfaces of these substrates () and (), grooves () and () are formed. These grooves () and () are formed so as to function as a heat pipe of a loop type when these substrates () and () are bonded.

Cooling device, electronic equipment device, and method of manufacturing cooling device

A surface processing method for processing the surface of an insulating article in which an ion-implanted surface-modified layer is effectively formed on the articleIn surface processing the articleof an insulating material, an electrically conductive thin metal filmis first formed on the article surface. A pulsed voltage containing a positive pulsed voltage and a negative pulsed voltage is applied to the article in a plasma containing ions to be implanted to implant ions in the article surface. This implants ions at right angles to the article surface to generate a surface-modified layerThere is no possibility of the articlebeing charged up due to application of a pulsed voltage.

Method for processing the surface of an insulating article, printer head and substrate for recording medium

A cooling device includes a flow-path substrate, an intermediate substrate, and a lid-substrate each made of a polyimide resin, and a condenser substrate incorporated into holes of the intermediate substrate and an evaporator substrate which are made of a metal having a high thermal conductivity, whereby heat from a heat source can be enclosed into the evaporator substrate and the condenser substrate, so that the quantity of the latent heat can be substantially increased.

Cooling device, electronic apparatus, display unit, and method of producing cooling device

The present invention provides a cooling device having improved cooling performance and providing higher flexibility, an electronic apparatus and an acoustic apparatus employing the cooling device, and a method for producing the cooling device. The cooling device is provided with an evaporator that is capable of cooling an object to be cooled, and a condenser that is capable of releasing to the outside heat that has been absorbed during the cooling by the evaporator. A vapor-phase conduit and a liquid-phase conduit, both of which are made of fluorocarbon resin and through which an operating medium flows, are disposed between and coupled to the evaporator and the condenser, thereby circulating the operating medium.

Cooling device, electronic apparatus and acoustic apparatus, and method for producing the cooling device

A film deposition method, which can form a high quality functional thin film excellent in various physical properties on a surface such as a plastic substrate, is provided. A carbon precursor film is formed on the surface of the substrate K with carbon ions (N2A) using a processing source ( ) (a FCVA ion source) with no voltage applied to the substrate K, and then carbon ions (N2B) are implanted in the carbon precursor film with a pulsed voltage containing a negative pulse voltage of &minus;15 kV or less applied to the substrate K, in order to form the carbon thin film. The quality of the carbon precursor film is improved and the various physical properties of the carbon thin film can be controlled.

Film deposition method

Provided is an etching method of accurately forming a fine structure in a plastic substrate. A surface reformed layer insoluble by an etchant, for example, limonene is formed on a surface of a substrate soluble by the etchant by ion implantation treatment; an opening is formed in the surface reformed layer by dry etching treatment; and the substrate is subjected to wet etching treatment by dipping the substrate in the etchant. A peripheral portion, around the opening, of the surface reformed layer functions as a mask to allow the wet etching to anisotropically proceed, and a portion, on the side opposed to the opening, of the surface reformed layer functions as an end point of the wet etching. As a result, a recess having a uniform inner diameter in the depth direction can be formed in the substrate.

Etching method

A surface processing method for processing the surface of an insulating article in which an ion-implanted surface-modified layer is effectively formed on the article In surface processing the article of an insulating material, an electrically conductive thin metal film is first formed on the article surface. A pulsed voltage containing a positive pulsed voltage and a negative pulsed voltage is applied to the article in a plasma containing ions to be implanted to implant ions in the article surface. This implants ions at right angles to the article surface to generate a surface-modified layer There is no possibility of the article being charged up due to application of a pulsed voltage.

Printer head

A surface hardening method for resins and a surface hardened resin, capable of reforming the surface of a plastic disk substrate at low energy in a short time, and a production device of such a resin is disclosed. The formation of an ion-implanted layer by implanting equal to or more than 10 carbon ions per cm into the surface of a plastic disk substrate at equal to or less than 20 KeV and the formation of a thin film of high hardness on the ion-implanted layer can be performed alternately or simultaneously, and the hardening rate is increased further by using a bias device.

Surface hardened resins for disk substrates, methods of manufacture thereof and production devices for the manufacture thereof

A surface processing method for processing the surface of an insulating article in which an ion-implanted surface-modified layer is effectively formed on the article . In surface processing the article of an insulating material, an electrically conductive thin metal film is first formed on the article surface. A pulsed voltage containing a positive pulsed voltage and a negative pulsed voltage is applied to the article in a plasma containing ions to be implanted to implant ions in the article surface. This implants ions at right angles to the article surface to generate a surface-modified layer . There is no possibility of the article being charged up due to application of a pulsed voltage.

Growing community of inventors

Kanagawa, Japan

Minehiro Tonosaki