Hitachi, Ltd.

Hitachi Computer Peripherals Co., Ltd.

Other

Hitachi Maxell, Limited

Hitachi Maxwell, Ltd.

Hitachi Haramachi Electronics Co., Ltd.

Minehiro Nemoto

Yasuyuki Kojima

Seigou Yukutake

Nobuyasu Kanekawa

Akihiko Kanouda

Noboru Akiyama

Fumikazu Takahashi

Takayuki Iwasaki

Masahiro Hamaogi

Katsuhiro Furukawa

Atsuo Watanabe

Kazuyuki Kamegaki

Shinichiro Mitani

Yoshihide Takahashi

Seigoh Yukutake

Chiyoshi Kamada

Masatsugu Amishiro

Yusuke Takeuchi

Takayuki Oouchi

Masato Isogai

Kazuhisa Takami

Takashi Tanabe

Takao Gotou

Toshikatsu Miyata

Hideki Miyazaki

Masahiro Iwamura

Yoshitaka Sugawara

Mitsuaki Horiuchi

Yasuo Shima

Koji Kawamoto

Seigo Yukutake

Yoshiaki Yuyama

Hitoshi Ohura

Shoichi Ozeki

Masato Miura

Isao Nemoto, Legal Representative

Koki Sakai

Shinichi Tanabe

Takayuki Iwasakii

Kazuhiro Shiina

Kunihoro Nunomura

A DC backup power supply system having a plurality of loads to which AC from a commercial power source is supplied, and DC power storage means for supplying DC power to the plurality of the loads at the time of a power outage of the commercial power source, said DC backup power supply system including: a control circuit having a first DC backup output for supplying a power from the DC power storage means to the plurality of the loads, including a specific load, only during the power outage of the commercial power source, and a second DC backup output for continuously supplying a power from the DC power storage means to the specific load regardless of the power outage of the commercial power source or sound operation thereof, the control circuit supplying the respective powers from the same DC power storage means to the first and second DC backup outputs.

DC backup power supply system, a disk array and a DC backup power supply

A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically insulates and isolates between the primary and secondary side circuits while permitting signal transmission between these circuits. A second capacitive insulator on the second semiconductor substrate electrically isolates the primary and secondary side circuit while permitting signal transmission therebetween. First and second frames are provided for input and output of signals to and from the primary and secondary side circuits. External electrodes of the first and second capacitive insulators are connected together by a third lead frame via a conductive adhesive body including more than one solder ball. The first and second substrates and the lead frames are sealed by a dielectric resin.

Semiconductor device having capacitive insulation means and communication terminal using the device

A communication system is provided including a transceiver and an application controller to transmit and receive signals through the transceiver. An isolator which insulates and separates the transceiver and application controller includes primary and secondary side circuits insulated from each other on a substrate and a capacitive insulating means to transfer signals between the primary and second sides while insulating and separating the primary side circuit from the secondary side circuit.

Isolator and a modem device using the isolator

A DC backup power supply system having a battery a charge-discharge circuit for charging and discharging a power between the battery and a DC line and a control circuit for controlling the charge-discharge circuit, wherein the battery has a number of battery cells and cylindrical portions of the battery cells are laid on an approximately horizontal plane.

DC backup power supply system

An uninterruptible power system for inputting an AC power, converting the AC power into a desired power, supplying the desired power to a load, and upon occurrence of an AC failure, converting a DC power from energy accumulation means into the desired power and supplying the desired power to the load, wherein the DC power from said energy accumulation means is passed through two serially connected boost means, and thereafter the power is converted into the desired power to be supplied to the load, wherein first boost means of the two serially connected boost means, which is nearer to the energy accumulation means, raises the DC electric power from said energy accumulation means to supply second boost means of the two serially connected boost means when supply of electric power is interrupted, and lowers inputted electric power for charging the electric accumulation means during an ordinary operation.

Uninterruptible power system

A reliable uninterruptible DC power supply device. The DC backup power supply device includes an AC/DC converter, a DC/DC converter, voltage step-up/down choppers and a battery connected to a DC path of a main circuit connected with a load via a switch, and a microcomputer. In the device, under control of the microcomputer, the voltage step-up/down choppers are first operated under a condition that the MOS FET was turned OFF for self diagnosis of the backup power supply device. Next, the switch is turned ON to execute the remaining self diagnosis. The DC backup power supply device can execute its self diagnosis with a reduced likelihood of danger of exerting an adverse effect on the main circuit and also can exhibit a reliable uninterruptible power supply function.

DC backup power supply device and method for diagnosing the same

Semiconductor device including primary and secondary side circuits on first and second substrates with capacitive insulation

A boost circuit is connected to a rechargeable battery and a switch is connected between a rectification circuit and a power factor correction converter. In the power failure state, the switch is turned on to activate the boost circuit and energy of the rechargeable battery is supplied to a load by rasing the voltage at two steps in the path from the boost circuit, switch, and to power factor correction converter. Since the voltage of the battery can be lowered, the number of serially connected cells can be made small. The volume of UPS can be reduced and a low cost can be realized. Since the number of serially connected cells is reduced, the reliability against failure of battery cells can be improved.

Wire bonding or printed wiring board leads or, alternatively, lead frames or equivalents thereof are used to electrically connect external electrodes of high withstand voltage capacitors formed on a plurality of semiconductor chips. A driver circuit for signal transmission or receiver circuit for signal receipt formed on the semiconductor chips are electrically connected with substrate-side electrodes of said high withstand voltage capacitors, causing the plurality of semiconductor chips to be received within either a single package or a single module. Using this arrangement, a semiconductor device is capable of achieving both dielectricity and size reduction.

Semiconductor device and communication terminal using thereof

An isolator is made monolithic by forming a capacitive insulating barrier using an interlayer insulation film on the semiconductor substrate to miniaturize the modem device by the monolithic isolator.

The hardware of an over-sampling A/D and D/A converter is provided, which hardware is capable of being operated with either kind of software: one corresponding to a first method in which the over-sampling ratio is fixed and the other corresponding to a second method in which the over-sampling ratio is variable. The value N written on the pseudo-frequency-dividing-ratio-register and the value N written on the pseudo-over-sampling-ratio-register are converted through a user interface into the frequency dividing ratio N by the conversion circuit and the converted result is written in the frequency-dividing-ratio-register

Over-sampling A/D, D/A converter

A circuit region on a main surface of an SOI substrate, and a isolating region defined by insulating isolation trenches and are connected by a wiring resistor, or a diffused resistor in the SOI substrate. The isolating region and an intermediate region are connected by a wiring resistor, or a diffused resistor in the SOI substrate. Furthermore, a circuit region on a main surface of an SOI substrate, and a isolating region defined by insulating isolation trenches and are connected by a wiring resistor, or a diffused resistor in the SOI substrate. The isolating region and an intermediate region are connected by a wiring resistor, or a diffused resistor in the SOI substrate. As a result, distribution of voltage applied between the circuit regions and by the wiring resistors or the diffused resistors to can increase the withstand voltage of a semiconductor integrated circuit.

Semiconductor integrated circuit device and manufacturing method thereof

A small sized semiconductor device having a high insulating performance between a primary side circuit and a secondary side circuit is realized. A circuit region plural first and second terminal electrodes connected to the circuit region and an insulation-separation region for separating electrically the first terminal electrodes from the second terminal electrodes, and for transmitting signals between the first and the second terminal electrodes are formed onto a semiconductor chip and the insulation-separation region is provided between the first and second terminal electrodes. The interval between the first and the second terminal electrodes on the same semiconductor chip can be separated with high insulating performance.

Semiconductor device

Growing community of inventors

Hitachi, Japan

Minehiro Nemoto