Fujitsu Corporation

Mineharu Tsukada

Nobuo Kamehara

Jeffrey Scott Cross

Koji Omote

Masaharu Hida

Kazuaki Kurihara

Yoshimasa Horii

Motoyuki Nishizawa

Hiromitsu Yokoyama

Toshihisa Anazawa

Alexei L Gruverman

Angus Kingon

Hitoshi Suzuki

Masato Wakamura

Koichi Niwa

Mitsushi Fujiki

Hiromi Ogawa

Masao Kondo

John David Baniecki

Kenji Maruyama

Yoshihiko Imanaka

Kaoru Hashimoto

Toyoo Miyajima

Kenji Nomura

Igor Stolichnov

Tsuyoshi Sakai

Florence Nawalage Cooray

Hiroshi Makihara

Etsuro Udagawa

A photocatalyst, represented by the following general formula (1):X(VO)(OH)&#x2003;&#x2003;General Formula (1)

Photocatalyst, and method for producing photocatalyst

A photocatalytic filter including first photocatalytic particles each of which is a composite of an adsorbent and titanium apatite, second photocatalytic particles each of which is glass coated with titanium apatite, a light source configured to emit ultraviolet rays, and a container accommodating the first photocatalytic particles, the second photocatalytic particles, and the light source.

Photocatalytic filter, purification device, and purification method

A magneto-resistive effect element is provided with a first soft magnetic layer, a magneto-resistive effect film formed directly on the first soft magnetic layer. and a second soft magnetic layer formed on the magneto-resistive effect film. The magneto-resistive effect element is configured as allowing electric current to flow in the thickness-wise direction. The first soft magnetic layer is composed of columnar crystals. The magneto-resistive effect film has an anti-ferromagnetic layer. The anti-ferromagnetic layer is formed directly on the first soft magnetic layer.

Magneto-resistive effect element magnetic disk device having magneto-resistive effect film and method of forming a CPP-type magneto-resistive effect element having a soft magnetic layer composed of columnar crystal

After a step of fabricating a MOS transistor () on a semiconductor substrate () and further steps up to bury a W plug (), an Ir film (), an IrOfilm (), a PZT film (), and an IrOfilm () are formed sequentially over the entire surface. The composition of the PZT film () is such that the content of Pb exceeds that of Zr and that of Ti. After processing the Ir film (), the IrOfilm (), the PZT film () and the IrOfilm (), annealing is effected to remedy the damage to the PZT film () that is caused when the IrOfilm () is formed and to diffuse Ir in the IrOfilm () into the PZT film (). As a result, the Ir diffused into the PZT film () concentrates at an interface between the IrOfilm () and the PZT film () and at grain boundaries in the PZT film (), and the Ir concentrations at the interface and boundaries are higher than those in the grains.

Ferroelectric capacitor and method of manufacturing the same

There are provided an apparatus for evaluating a piezoelectric film, which contains: a detection unit containing a pair of probes, each probe containing a cantilever and a probe tip; and an evaluation unit, wherein the detection unit is configured to respectively place the probe tips on both surfaces of a sample comprising a piezoelectric film so as to detect a displacement magnitude of the pair of probes, and the evaluation unit is configured to evaluate either or both a deformation and a displacement of the piezoelectric film based upon the detected displacement magnitude of the pair of probes, and a method for evaluating a piezoelectric film by using the apparatus for evaluating a piezoelectric film.

Apparatus for evaluating piezoelectric film, and method for evaluating piezoelectric film

A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device

Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip

The present invention aims to provide an IC card, requiring no special additional devices, not causing a liquid leakage of an aqueous electrolyte, requiring no battery, and capable of displaying information easily and cheaply by internally generated electric power and remaining the information even after the voltage is stopped applying. An IC card of the present invention has an electric power generator capable of generating electric power by an external stimulus and a display driven by the generated electric power so as to display information. The IC card of the present invention preferably have aspects of that the electric power generator is a piezoelectric transducer, a nonvolatile memory for storing information displayed on the display is provide, the nonvolatile memory is a ferroelectric memory, the display is formed by an electrochromic display device, and the electrochromic display device is an all solid-state electrochromic display device.

IC card and method of operating the same

Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film

After placing a sample in a heating vacuum chamber, a probe is climbed down to a position above a capacitor formed in the sample whose electrical characteristic is supposed to be measured. The probe is contacted with both electrodes of the capacitor, which is confirmed by electrical measurement. In order to measure capacitance loss, after filling Ngas up in the heating vacuum chamber, a mixed gas is introduced from a line for 3 vol % H+97 vol % Nto the inside of the heating vacuum chamber. After pressure has been stabilized there, capacitance loss and lapsed time are measured at the same time. Concentrations of residual HO and residual Oin the heating vacuum chamber are measured by a quadrupole mass spectrometer QMS; and at the same time, concentrations of each of residual HO and residual Oin an exhaust gas are measured by sensors.

Inspection device and inspection method of dielectric film, and method of manufacturing semiconductor device

A ferroelectric capacitor includes a lower electrode, a ferroelectric capacitor insulation film formed on the lower electrode and an upper electrode formed on the ferroelectric capacitor insulation film, wherein the ferroelectric capacitor insulation film has a composition of PZT and contains an excess amount of Pb with respect to a stoichiometry of PZT.

Ferroelectric capacitor having a PZT layer with an excess of Pb

A method of manufacturing an electronic device including an oxide film of perovskite-type, said method comprising the steps of forming on a base substrate a first conductive oxide film of perovskite type in an atmosphere of reduced pressure at a first temperature, and performing heat treatment on the first conductive oxide film in an oxidizing atmosphere containing oxygen at a second temperature which is higher than the first temperature.

Electronic device having perovskite-type oxide film, production thereof, and ferroelectric capacitor

In a method of manufacturing piezoelectric ceramics by molding pre-fired or calcined powders of ingredients of a piezoelectric ceramic material and sintering the powder mold at a high pressure, the powder mold is pre-sintered at an atmospheric pressure before sintering at high pressure (HIP). Preferably, after the sintering HIP step, a thermal treatment is performed at a temperature of from 500 to 1000.degree. C. under an oxidizing atmosphere. For a Pb(Zn.sub.1/3 Nb.sub.2/3)O.sub.3 --PbTiO.sub.3 based piezoelectric ceramic, the composition is preferably set to (Pb.sub.1-x Ba.sub.x)[(Zn.sub.1/3 Nb.sub.2/3).sub.1-y Ti.sub.y ]O.sub.3, where 0.001&lt;x&lt;0.055 and 0.05&lt;y&lt;0.20.

Method of manufacturing piezoelectric materials

A piezoelectric device including an insulating substrate and a displacement layer formed on the insulating substrate including a first electrode, a piezoelectric layer and a second electrode laid on the insulating substrate in the stated order, a part of a surface of the piezoelectric device in a region where the first and the second electrodes overlap each other is projected out of the rest part of the surface. The multi-layer body has a pair of high rigidity plates each provided on a side-wall for securing the multi-layer body.

Ink jet printer head and method for fabricating the same including a

A number of single crystal domains having crystal orientations different from each other cohere to form one grain, and a number of grains cohere to form a piezoelectric material. When a grain has a size exceeding a certain size, cracks take place in the surface of the grain. Because of generation of the cracks constraining forces from adjacent domains are weak, and a displacement which is substantially the same as a displacement ideal to piezoelectric material can be obtained.

Growing community of inventors

Kawasaki, Japan

Mineharu Tsukada