Semiconductor Energy Laboratory Co., Ltd.

Minato Ito

Yuki Okamoto

Kei Takahashi

Munehiro Kozuma

Takahiko Ishizu

Takanori Matsuzaki

Tatsuya Onuki

Yasuhiro Jinbo

Kohei Yokoyama

Shunpei Yamazaki

Takayuki Ikeda

Hiroki Inoue

Hitoshi Kunitake

Yusuke Nishido

Yusuke Koumura

The circuit layout generation system includes a memory portion, a limitation data arithmetic portion, and a layout data arithmetic portion. The memory portion is configured to store circuit connection data and first limitation data. The circuit connection data is data regarding connection of a transistor and a capacitor included in a pixel circuit. The first limitation data includes data that determines a wiring interval of the transistor and a wiring interval of the capacitor and data that determines placement coordinates of the transistor and the capacitor. The limitation data arithmetic portion is configured to generate second limitation data on the basis of the circuit connection data and the first limitation data and store the second limitation data in the memory portion. The second limitation data is data that determines the placement of the transistor and the capacitor designated by the placement coordinates so that the transistor and the capacitor are positioned close to each other. The layout data arithmetic portion is configured to generate layout data on the basis of the circuit connection data, the first limitation data, and the second limitation data.

Circuit layout generation system

An electronic device with a novel structure is provided. The electronic device includes a display apparatus, a gaze detection portion, and an arithmetic portion. The display apparatus includes a display portion divided into a plurality of sub-display portions and a functional circuit including a luminance conversion circuit. The gaze detection portion has a function of detecting the user's gaze. The arithmetic portion has a function of allocating the plurality of sub-display portions to a first section or a second section with the use of the detection result of the gaze detection portion. The functional circuit has a function of performing display on the sub-display portion included in the first section with a first driving frequency and performing display on the sub-display portion included in the second section with a second driving frequency lower than the first driving frequency. The luminance conversion circuit has a function of converting image data displayed on the second section to image data with reduced luminance to be displayed in the sub-display portion.

Electronic device

A display apparatus with a novel structure is provided. The display apparatus includes a first layer and a second layer positioned above the first layer. The first layer includes a driver circuit region, and the second layer includes a pixel array. The pixel array includes a plurality of pixel regions. The driver circuit region includes a control circuit unit and a plurality of local driver circuits. One of the plurality of local driver circuits corresponds to any one of the plurality of pixel regions. The local driver circuit has a function of outputting a driving signal for driving a plurality of pixels included in the corresponding pixel region. The control circuit unit has a function of comparing definition data of an input image signal and aspect ratio data of the pixel array to determine a first region where display is performed and a second region where display is not performed, and outputting, to the local driver circuit corresponding to the second region, a control signal for stopping output of the driving signal.

Display apparatus and electronic device

A semiconductor device having redundancy is provided. The semiconductor device includes a first driver circuit, a second driver circuit, a first selection circuit, a second selection circuit, and a switch circuit. An output terminal of the first driver circuit is electrically connected to an input terminal of the first selection circuit and a first terminal of the switch circuit, and an output terminal of the second driver circuit is electrically connected to an input terminal of the second selection circuit and a second terminal of the switch circuit.

Semiconductor device, display apparatus, and electronic device

A semiconductor device with reduced power consumption is provided. The semiconductor device includes a node ND, a node ND, a resistor, a capacitor, and a comparison circuit. The resistor is electrically connected in series between one of a positive electrode and a negative electrode of a secondary battery and a first terminal. The resistor has a function of converting current flowing between the one of the positive electrode and the negative electrode of the secondary battery and the first terminal into a first voltage. The first voltage is added to a voltage of the node NDthrough the capacitor. The comparison circuit has a function of comparing a voltage of the node NDand the voltage of the node ND. The comparison circuit outputs a signal that notifies detection of overcurrent when the voltage of the node NDis higher than the voltage of the node ND

Semiconductor device and battery pack

A semiconductor device that functions as a relay station and is reduced in size is provided. The semiconductor device includes an operational amplifier, a first transistor and a first capacitor that are electrically connected to a first input side of the operational amplifier, and a first resistor and a second resistor that are electrically connected to a second input side. The second resistor is electrically connected to an output side of the operational amplifier, a gate of the first transistor is electrically connected to a first power supply, the first resistor is electrically connected to a second power supply, and at least a transistor included in the operational amplifier has a region overlapping with the first transistor.

Semiconductor device

A semiconductor device capable of detecting a micro-short circuit of a secondary battery is provided. The semiconductor device includes a first source follower, a second source follower, a transistor, a capacitor, and a comparator. A negative electrode potential and a positive electrode potential of the secondary battery are supplied to the semiconductor device, a first potential is input to the first source follower, and a second potential is input to the second source follower. A signal for controlling the conduction state of the transistor is input to a gate of the transistor, and an output potential of the first source follower related to the potential between the positive electrode and the negative electrode of the secondary battery is sampled. The comparator compares the sampled potential with an output potential of the second source follower, whereby the semiconductor device can deal with a secondary battery in which the potential between the positive electrode and the negative electrode is changed by charge and discharge.

Device detecting abnormality of secondary battery and semiconductor device

A semiconductor device that tests and/or monitors each of batteries provided in an assembled battery is provided. The semiconductor device includes a hysteresis comparator and a circuit, and the circuit has a function of setting a high-level side threshold voltage and a low-level side voltage of the hysteresis comparator. The circuit includes first and second capacitors. A first terminal of the first capacitor is electrically connected to a high-level side reference potential input terminal of the hysteresis comparator and a first terminal of the second capacitor is electrically connected to a low-level side reference potential input terminal of the hysteresis comparator. After a first reference potential is input to the high-level side reference potential input terminal and a second reference potential is input to the low-level side reference potential input terminal, a negative electrode of a cell is electrically connected to each second terminal of the first and second capacitors, whereby the potential of each first terminal of the first and second capacitors is changed.

Semiconductor device, power storage device, and electronic device

A semiconductor device capable of level shifting in a negative potential direction using an n-channel transistor is provided. The semiconductor device includes a first source follower, a second source follower, and a comparator. The first source follower is supplied with a second high power supply potential and a low power supply potential; the second source follower is supplied with a first high power supply potential and the low power supply potential; and a digital signal which expresses a high level or a low level using the second high power supply potential or the first high power supply potential is input to the first source follower. Here, the second high power supply potential is a potential higher than the first high power supply potential, and the first high power supply potential is a potential higher than the low power supply potential. The comparator compares output potentials of the first source follower and the second source follower and outputs a digital signal which expresses a high level or a low level using the first high power supply potential or the low power supply potential.

Single-polarity level shifter circuit and semiconductor device

A method for manufacturing a display device, which does not easily damage an electrode, is provided. In the first step, a terminal electrode, a wiring, and a functional layer are provided over a first substrate; the terminal electrode, the wiring, and the functional layer are electrically connected to one another; an insulating layer is provided over the terminal electrode; a first layer is provided over the terminal electrode and the insulating layer; an adhesive layer is sandwiched between the first substrate and a second substrate; the second substrate and the adhesive layer include a first opening overlapping with part of the first layer; and the insulating layer includes a second opening inside the first opening in a top view. In the second step, part of the first layer is removed by emitting particles having a high sublimation property to the first layer, so that the terminal electrode is exposed.

Method for manufacturing display device and method for manufacturing electronic device

A device in which warpage or distortion is less likely to occur even in a high-temperature or high-humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, and an element layer. The first flexible substrate includes an organic resin. The second flexible substrate includes an organic resin. The element layer is positioned between the first flexible substrate and the second flexible substrate. The element layer includes a light-emitting element. The light-emitting element emits light to the first flexible substrate side. The first flexible substrate has higher average transmittance of light having a wavelength of greater than or equal to 400 nm and less than or equal to 800 nm than the second flexible substrate.

Light-emitting device, module, and electronic device

Provided is a device in which heat conduction from a sealant to a functional element is suppressed and whose bezel is slim. The sealing structure includes a first substrate, a second substrate whose surface over which a sealed component is provided faces the first substrate, and a frame-like sealant which seals a space between the first substrate and the second substrate with the first substrate and the second substrate. The second substrate includes a groove portion between the sealant and the sealed component. The groove portion is in a vacuum or includes a substance whose heat conductivity is lower than that of the second substrate.

Growing community of inventors

Kanagawa, Japan

Minato Ito