Silcotek Corporation

Aixtron Se

Min Yuan

David A Smith

James B Mattzela

Paul H Silvis

Jesse Bischof

Gary A Barone

Lucas D Patterson

Dietmar Keiper

Anna Katharina Haab

Olaf Martin Wurzinger

Dielectric coatings, articles having dielectric coatings, and systems including coating having dielectric coatings are disclosed. The dielectric article includes a substrate having hidden surfaces and a dielectric coating on the hidden surfaces of the substrate. The dielectric coating has a bulk resistivity of at least 10Ω·cm and a thickness of between 30 nanometers and 3,000 nanometers.

Dielectric article

Corrosion-resistant coated articles and a thermal chemical vapor deposition coating processes are disclosed. The article includes a metallic material having a first composition including a first iron concentration and a first chromium concentration, the first iron concentration being greater than the first chromium concentration, a surface of the metallic material having a second composition including a second iron concentration and a second chromium concentration, the second chromium concentration being less than the first chromium concentration, an oxide layer on the surface of the metallic material having a third composition including an iron oxide concentration and a chromium oxide concentration, the chromium oxide concentration being greater than the iron oxide concentration and being devoid of precipitates, and a thermal chemical vapor deposition coating on the oxide layer. The process includes producing the article by treating to produce the surface, oxidizing to produce the oxide layer, and applying the coating.

Corrosion-resistant coated article and thermal chemical vapor deposition coating process

LC techniques are disclosed. The LC technique includes providing a liquid chromatography system having a coated metallic fluid-contacting element, and transporting a fluid to contact the coated metallic fluid contacting element. Conditions for the transporting of the fluid are selected from the group consisting of the temperature of the fluid being greater than 150 degree Celsius, pressure urging the fluid being greater than 60 MPa, the fluid having a protein-containing analyte incompatible with one of titanium and polyether ether ketone, the fluid having a chelating agent incompatible with the one or both of the titanium or the polyether ether ketone.

Liquid chromatography technique

Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

Nano-wire growth

A coated article is disclosed. The article includes a coating formed by thermal decomposition, oxidation then functionalization. The article is configured for a marine environment, the marine environment including fouling features. The coating is resistant to the fouling features. Additionally or alternatively, the article is a medical device configured for a protein-containing environment, the protein-containing environment including protein adsorption features. The coating is resistant to the protein adsorption features.

Thermal chemical vapor deposition coated article and process

Liquid chromatography techniques are disclosed. Specifically, the liquid chromatography technique includes providing a liquid chromatography system having a coated metallic fluid-contacting element, and transporting a fluid to contact the coated metallic fluid-contacting element. Conditions for the transporting of the fluid are selected from the group consisting of the temperature of the fluid being greater than 150&#xb0; C., pressure urging the fluid being greater than 60 MPa, the fluid having a protein-containing analyte incompatible with one or both of titanium and polyether ether ketone, the fluid having a chelating agent incompatible with the one or both of the titanium or the polyether ether ketone, and combinations thereof.

Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

Silicon-nitride-containing thermal chemical vapor deposition coating

Coated articles are disclosed. One embodiment of a coated article includes a substrate capable of being subjected to corrosion and a deposited coating on the substrate. The deposited coating has silicon with the substrate resisting corrosion with the deposited coating on the substrate when exposed to 15% NaClO by a rate of at least 5% greater than the corrosion rate of a coating applied with the same process but without introducing the deposition gas at the sub-decomposition temperature and/or the substrate with the deposited coating having a 15% NaClO corrosion rate of between 0 and 3 mils per year.

Coated article

Thermal chemical vapor deposition processes and coated articles are disclosed. The coated article includes a surface having a surface impurity and a coating on the surface formed by thermally reacting a gas. In comparison to a comparable coating without the surface impurity, the coating on the surface has substantially the same level of adhesion, corrosion resistance over 24 hours in 6M HCl, corrosion resistance over 72 hours in NaClO, and electrochemical impedance spectroscopy results. Additionally or alternatively, the surface impurity has properties that reduce or eliminate adhesion of a comparative coating produced by decomposition of silane on a comparative surface following exposure of the surface to a temperature.

Thermal chemical vapor deposition process and coated article

A delivery device, manufacturing system, and process of manufacturing are disclosed. The delivery device includes a feed tube and a chemical vapor deposition coating applied over an inner surface of the feed tube, the chemical vapor deposition coating being formed from decomposition of dimethylsilane. The manufacturing system includes the delivery device and a chamber in selective fluid communication with the delivery device. The process of manufacturing uses the manufacturing system to produce an article.

Delivery device, manufacturing system and process of manufacturing

A chemical vapor deposition process and coated article are disclosed. The chemical vapor deposition process includes positioning an article in a chemical vapor deposition chamber, then introducing a deposition gas to the chemical vapor deposition chamber at a sub-decomposition temperature that is below the thermal decomposition temperature of the deposition gas, and then heating the chamber to a super-decomposition temperature that is equal to or above the thermal decomposition temperature of the deposition gas resulting in a deposited coating on at least a surface of the article from the introducing of the deposition gas. The chemical vapor deposition process remains within a pressure range of 0.01 psia and 200 psia and/or the deposition gas is dimethylsilane. The coated article includes a substrate subject to corrosion and a deposited coating on the substrate, the deposited coating having silicon, and corrosion resistance.

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State College, PA, United States of America

Min Yuan