Samsung Electronics Co., Ltd.

Min-Young Hur

Jong-Woo Sun

Jae-Hyun Lee

Kyo-Hyeok Kim

Seung-Bo Shim

Kyung-Hoon Lee

Hyo-Sung Kim

Eun-Woo Lee

Ji-Soo Im

Dong-Hyeon Na

Ha-Dong Jin

A plasma processing apparatus includes a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.

Plasma processing apparatus

According to a method of controlling uniformity of plasma, a first RF driving pulse signal including first RF pulses is generated by pulsing a first RF signal having a first frequency, and a second RF driving pulse signal including second RF pulses is generated by pulsing a second RF signal having a second, lower frequency. The first and second RF driving signals are applied to a top electrode and/or a bottom electrode of a plasma chamber. A harmonic control signal including harmonic control pulses is generated based on timing of the first and second RF pulses. A harmonic component of the first and second RF driving pulse signals is reduced via intermittent activation and deactivation of a harmonic control circuit as controlled by the harmonic control signal. The uniformity of plasma is improved through the control based on timings of the RF driving pulses.

Method of controlling uniformity of plasma and plasma processing system

Growing community of inventors

Suwon-si, South Korea

Min-Young Hur