Skhynix Inc.

Min Yong Lee

Young Ho Lee

Seung Beom Baek

Jong Chul Lee

Hyung Suk Lee

Keum Bum Lee

Jin Ku Lee

An access device having a reduced height and capable of suppressing leakage current, a method of fabricating the same, and a semiconductor memory device including the same, are provided. The access device may include a stacked structure including a first-type semiconductor layer having a first dopant, a second-type semiconductor layer having a second dopant, and a third-type semiconductor layer. A first counter-doping layer, having a counter-dopant to the first dopant, is interposed between the first-type semiconductor layer and the third-type semiconductor layer. A second counter-doping layer, having a counter-dopant to the second dopant, is interposed between the third-type semiconductor layer and the second-type semiconductor layer.

Fabrication method of semiconductor memory device

A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the lower electrode, and an upper electrode formed on the switching unit.

Resistive memory device and fabrication method thereof

A PCRAM device and a method of manufacturing the same are provided. The PCRAM device includes a semiconductor substrate, and a PN diode formed on the semiconductor substrate and including a layer interposed therein to suppress thermal diffusion of ions.

Growing community of inventors

Gyeonggi-do, South Korea

Min Yong Lee