Winbond Electronics Corporation

Min-Yen Liu

Lih-Wei Lin

Tsung-Huan Tsai

Lung-Chi Cheng

Wan-Ni Shih

Huan-Ming Chiang

The present disclosure provides a method for ripening a resistive random access memory (RRAM). The method includes: obtaining a first RRAM, wherein the first RRAM includes a plurality of memory cells; performing a forming operation and an initial reset operation on the first RRAM to form a plurality of specific memory cells in the memory cells; reading a specific number of the specific cells, and determining a ripening cycle parameter according to the specific number; and performing a ripening operation on the first RRAM based on the ripening cycle parameter to ripen the first RRAM as a second RRAM.

Method for ripening resistive random access memory

A writing method of a resistive memory storage apparatus includes: applying one of a set voltage and a reset voltage serving as a first selected voltage to a memory cell and obtaining a first read current; applying a disturbance voltage to the memory cell and obtaining a second read current; and determining whether a relationship between the first and second read currents satisfies a preset relationship, and if not, applying the other of the set voltage and the reset voltage serving as a second selected voltage to the memory cell and applying the first selected voltage to the memory cell again. A polarity of the disturbance voltage is different from that of the first selected voltage, and the absolute value of the disturbance voltage is less than that of the second selected voltage. A resistive memory storage apparatus is also provided.

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Taichung, Taiwan

Min-Yen Liu