Samsung Electronics Co., Ltd.

Min-Yeab Choo

Dong-Yang Lee

Ju-yun Jung

Bu-Il Jung

Sun-Young Lim

Do-Geun Kim

Hyuk Soo Han

Mi-Kyoung Park

Sung-Ho Cho

Hee-Joo Choi

A memory system includes a memory controller, a memory cell array, a location information storage unit, an address mapping table, an address conversion unit, and a mapping information calculation unit. The memory controller generates a logical address signal and an address re-mapping command. The memory cell array includes a plurality of logic blocks. The location information storage unit stores location information corresponding to faulty memory cells included in the memory cell array. The address mapping table stores address mapping information. The address conversion unit converts the logical address signal to a physical address signal corresponding to the memory cell array based on the address mapping information. The mapping information calculation unit generates the address mapping information to reduce the number of logic blocks including the faulty memory cells based on the location information upon the mapping information calculation unit receiving the address re-mapping command.

Memory system capable of re-mapping address

A memory system includes a read-only memory (ROM), a main memory and a processor. The ROM stores a basic input/output system (BIOS). The main memory includes a fail address table which stores at least one fail address designating a memory cell row having at least one defective cell. The processor receives fail information of the at least one fail address from the main memory and loads data associated with a booting operation of the memory system in a safe area of the main memory by avoiding a fail area corresponding to the at least one fail address during power-on operation while a power is applied to the memory system. The data associated with the booting operation is stored in a storage device.

Memory device and computing system including the same

A method of repairing a memory device including a boot memory region, a normal memory region, and a redundant memory region, the redundant memory region including a plurality of repair memory units, includes repairing the boot memory region by performing at least one of excluding first fault memory units of the boot memory region from use as storage and replacing the first fault memory units with boot repair memory units of the repair memory units, each of the first fault memory units having at least one fault memory cell; and after the repairing the boot memory region, repairing the normal memory region by performing at least one of excluding second fault memory units from use as storage and replacing the second fault memory units with normal repair memory units of the repair memory units.

Method of repairing a memory device and method of booting a system including the memory device

Growing community of inventors

Suwon-si, South Korea

Min-Yeab Choo