Pukyong National University

Samsung Led Co., Ltd.

Cssolution Co., Ltd.

Min Yang

Hyung Soo Ahn

Sam Nyung Yi

Kee Sam Shin

Young Moon Yu

Masayoshi Koike

Jaeun Yoo

Hyo Jong Lee

Moon Yeoung Yu

Hyung-Soo Ahn

Hongju Ha

The present invention relates to a light emitting diode (LED) chip, in which a hybrid sensor is formed in a nitride-based LED structure. A chip structure embedded with such a hybrid sensor functions as an LED light emitting sensor which can monitor environmental pollution while functioning as a lighting element at the same time and has an effect of being used as a variety of environment pollution sensors according to the type of an electrode material.

LED chip integrated with hybrid sensor and method of fabricating the same

The present invention relates to a nitride light emitting diode (LED) package, and more specifically, to a nitride light emitting diode package which can improve light-emitting efficiency by increasing light emitting surface area, reduce operating voltage by simultaneously emitting light from six cells at once, and can increase operating current.

Light emitting diode package and method for manufacturing the same

A light-emitting device includes a semiconductor layer, a light-emitting stack structure formed on a first surface of the semiconductor layer, and a plurality of inverted pyramid structures formed on a second surface of the semiconductor layer opposite to the first surface. Each of the inverted pyramid structures has a sectional area increasing as each of the inverted pyramid structures is more extended in a vertical direction from the second surface.

Semiconductor template substrate, light-emitting device using a semiconductor template substrate, and manufacturing method therefor

A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.

Method of forming nitride film and nitride structure

Growing community of inventors

Busan, South Korea

Min Yang