Samsung Electronics Co., Ltd.

Min-Woong Seo

JungChak Ahn

Jae-kyu Lee

Jaekyu Lee

An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.

Image sensor device

An image sensor includes a plurality of pixels. Each of the plurality of pixels includes a photodetector that includes a photoelectric conversion element that outputs a detection signal in response to light incident thereon, a comparator that compares the detection signal of the photodetector with a ramp signal and outputs a comparison signal in response thereto, a plurality of first memory cells that store a first counting value corresponding to a first voltage level of the detection signal using the comparison signal of the comparator and output the first counting value through a plurality of transmission lines, and a plurality of second memory cells that store a second counting value corresponding to a second voltage level of the detection signal using the comparison signal of the comparator and output the second counting value through the plurality of transmission lines.

Growing community of inventors

Hwasung-si, South Korea

Min-Woong Seo