Samsung Electronics Co., Ltd.

Min-Tai Yu

Choong-Ho Lee

Jung-Dal Choi

Tae-Yong Kim

Ki-Hyun Kim

Jeong-Dong Choe

Sung-Hoi Hur

Dong-Hoon Jang

Dong-Uk Choi

Jae Duk Lee

Young-Bae Yoon

Se-Hoon Lee

Se Jun Park

Woo-Jung Kim

A nonvolatile memory device in which reliability is improved and a method for fabricating the same are provided. The nonvolatile memory device includes a mold structure which includes a first insulating pattern, a first gate electrode and a second insulating pattern sequentially stacked on a substrate, a semiconductor pattern which penetrates the mold structure, is connected to the substrate, and extends in a first direction, a first charge storage film extending in the first direction between the first insulating pattern and the second insulating pattern and between the first gate electrode and the semiconductor pattern, and a blocking insulation film between the first gate electrode and the first charge storage film, wherein a first length at which the first charge storage film extends in the first direction is longer than a second length at which the blocking insulation film extends in the first direction.

Nonvolatile memory device and method for fabricating the same

A flash memory device includes a bulk region, first through nth memory cell transistors arranged in a row on the bulk region, first through nth word lines respectively connected to gates of the first through nth memory cell transistors, a first dummy cell transistor connected to the first memory cell transistor, a first dummy word line connected to a gate of the first dummy cell transistor, a first selection transistor connected to the first dummy cell transistor, a first selection line connected to a gate of the first selection transistor, and a voltage control unit connected to the first selection line, the voltage control unit being adapted to output to the first selection line a voltage lower than a voltage applied to the bulk region, in an erasing mode for erasing the first through nth memory cell transistors.

Flash memory device and programming/erasing method of the same

A semiconductor device includes a driving active region defined in a substrate and at least three driving transistors disposed at the driving active region. The driving transistors share one common source/drain, and each of the driving transistors includes individual source/drains being independent from each other. The common source/drain and the individual source/drains are disposed in the driving active region.

Semiconductor device including driving transistors

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Seoul, South Korea

Min-Tai Yu