Skhynix Inc.

Min Sung Ko

Dong Sun Sheen

Won Joon Choi

Wan Sup Shin

Young Ho Yang

Sung Soon Kim

Jong Gi Kim

Woo Jae Chung

Jung Myoung Shim

Hyeng Woo Eom

Kyeong Bae Kim

Kwang Wook Lee

Young Ock Hong

Byung Woo Kang

Hwal Pyo Kim

Jin Taek Park

Gwang Been Kim

A semiconductor memory device includes a substrate including a peripheral circuit, a stepped dummy stack overlapping the substrate and including a plurality of steps extending in a first direction, a plurality of contact groups passing through the stepped dummy stack, and upper lines respectively connected to the contact groups. The contact groups include a first contact group having two or more first contact plugs arranged in the first direction. The upper lines include a first upper line commonly connected to the first contact plugs.

Semiconductor memory device

The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Method of manufacturing semiconductor device

Method of manufacturing semiconductor device through by-product removal from conductive layer

A semiconductor device includes a stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

Semiconductor device and method of fabricating the same

In accordance with an embodiment of the present disclosure, a method of manufacturing a semiconductor device may include forming an opening passing-through a multi-layer stack, forming a channel layer on and along a sidewall of the opening, forming a conductive layer on and along a sidewall of the channel layer, and applying a laser to the conductive layer to transfer a heat from the conductive layer to the channel layer to heat-treat the channel layer using the heat.

A semiconductor device includes stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

A semiconductor device and a method of manufacturing the same are provided. The device includes insulating patterns and conductive patterns stacked alternately, a channel layer formed through the insulating patterns and the conductive patterns, a tunnel insulating layer formed to surround sidewalls of the channel layer, and a charge storage layer formed to surround the tunnel insulating layer. An interfacial surface of the tunnel insulating layer in contact with the charge storage layer includes a thermal oxide layer.

Growing community of inventors

Icheon-si, South Korea

Min Sung Ko