Samsung Electronics Co., Ltd.

Min-Sun Keel

Young Chan Kim

Young Gu Jin

Hyun Surk Ryu

Youngchan Kim

Younggu Jin

Doo Won Kwon

Sang Kil Lee

Dae Shik Kim

Donghyun Kim

Young-chan Kim

Kwang Hyun Lee

Tae-Yon Lee

Kwang-Hyun Lee

Kyung-min Kim

Young-gu Jin

Jung Hyuk Lee

Hyun-surk Ryu

Kyu-Min Kyung

Hoon Joo Na

KyoungMin Koh

Won-Ho Choi

Young-Kyun Jeong

Kil Ho Lee

Mira Lee

Ji-Hun Shin

Daeyun Kim

Kang Ho Lee

Sehyeon Kang

Seung-Chui Shin

Shin Hee Han

Chanho Chun

Dae-yun Kim

Myung-han Bae

Yeo-myung Kim

Sanghoon Ha

Disclosed is an image sensor including a pixel array including a plurality of pixels, each of the pixels including a first photodiode and a second photodiode, each of which outputs a first pixel signal based on a first conversion gain using the second photodiode in a first period, outputs a second pixel signal based on a second conversion gain using the second photodiode in a second period, outputs a third pixel signal based on the first conversion gain using the first photodiode in a third period, and outputs a fourth pixel signal based on the second conversion gain using the first photodiode in a fourth period, an ADC circuit that performs sampling on a reset signal and an image signal of each of the first to fourth pixel signal. A sampling count and the number of sampling bits are adjusted differently from each of the first to fourth period.

Image sensor performing selective multiple sampling and operating method thereof

An image sensor including a variable resistance element is provided. The image sensor comprises first and second chips having first and second connecting structures; and a contact plug connecting the first and second chips. The first chip includes a photoelectric conversion element. The second chip includes a first variable resistance element. The contact plug extends from the first surface of the first semiconductor substrate to connect the first and second connecting structures.

Image sensor

An image sensor includes an upper chip having a pixel array connected to a first connecting structure, and a lower chip below the upper chip and having a second connecting structure connected to the first connecting structure and having first and second stacked metal layers with a same thickness, a third metal layer on the second metal layer and thicker than the second metal layer, a fourth metal layer on the third metal layer and thicker than the third metal layer, first through third insulating layers alternating with the first through fourth metal layers, a first memory device with a first MTJ element in at least one of the first and second insulating layers, and a second memory device with a second MTJ element different from the first MTJ element, the second MTJ element being in at least one of the first through third insulating layers.

Image sensor and image sensing device

A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

3D image sensor

A time of flight (TOF) camera device and a method of operating the same is provided. The time of flight (TOF) camera device includes a pulse generator configured to generate a pulse signal, a light module configured to emit output light to at least one object in response to the pulse signal, a three-dimensional (3D) sensor configured to receive reflected light when the output light is reflected by the at least one object for a first frame, a distance calculator configured to receive an output of the 3D sensor and generate a distance data signal, and a light density control device configured to receive the distance data signal from the distance calculator and output a light density control signal. The light density control signal may adjust the size of an opening in the light module to change a projected area from the output light onto the at least one object.

TOF camera device and method of driving the same

An electronic device includes a time of flight (ToF) sensor including a pixel array, a light source that emits light signals, and an optical device that projects the light signals to areas of an object which respectively correspond to a plurality of pixel blocks including pixels of the pixel array. Each of the pixels includes a plurality of taps each including a photo transistor, a first transfer transistor connected with the photo transistor, a storage element connected with the first transfer transistor, a second transfer transistor connected with the storage element, a floating diffusion area connected with the second transfer transistor, and a readout circuit connected with the floating diffusion area. An overflow transistor is disposed adjacent to the photo transistor and connected with a power supply voltage.

Electronic device including light source and ToF sensor, and LIDAR system

An image sensor includes a plurality of pixels and photo gate controller circuitry. Each pixel may transmit a pixel signal, corresponding to a photoelectric signal, in response to a photo gate signal in a frame. The photo gate controller circuitry may generate photo gate signals and transmit photo gate signals to the pixels. The photo gate controller circuitry includes a first delay circuit configured to transmit first delay clock signals each being delayed with respect to a reference clock signal by a certain amount of time and a second delay circuit configured to transmit second delay clock signals each being delayed with respect to the reference clock signal by a certain amount of time. The pixels are each configured to selectively receive signals, as the photo gate signals, among the delay clock signals output from the first delay circuit and the delay clock signals output from the second delay circuit.

Image sensors for measuring distance including delay circuits for transmitting separate delay clock signals

Image sensors and methods of operating the image sensors are provided. The image sensors may include a pixel configured to generate an image signal in response to light incident on the pixel. The pixel may include a charge collection circuit configured to collect charges, which are produced by the light incident on the pixel, during a sensing period and a floating diffusion region. The image sensor may further include a storage unit configured to store the charges and, during a transfer period after the sensing period, configured to transfer at least a portion of the charges to the floating diffusion region. An amount of charges that is transferred from the storage unit to the floating diffusion region may be controlled by a voltage level of a storage control signal that is applied to a storage control terminal of the storage unit.

Image sensors, image detecting systems including the image sensors, and methods of operating the image sensors

A pixel array in a three-dimensional image sensor includes depth pixels and an ambient light cancellation (ALC) circuit. The depth pixels operate in response to photo control signals having different phases, and generate distance information of an object based on light reflected by the object. The ALC circuit removes an ambient light component from the reflected light, and is shared by the depth pixels. Each depth pixel includes a photoelectric conversion region, a floating diffusion region, a photo gate, and a drain gate. The photoelectric conversion region collects photo charges based on the reflected light. The floating diffusion region accumulates the photo charges. The photo gate is activated in response to one of the photo control signals. The photoelectric conversion region accumulates the photo charges when the photo gate is activated, and the photo charges in the photoelectric conversion region are released when the drain gate is activated.

Pixel array included in three-dimensional image sensor and method of operating three-dimensional image sensor

Image sensors are provided. An image sensor includes a substrate that includes a pixel region, a first surface, and a second surface that is opposite the first surface. The image sensor includes first and second photogates that are on the first surface and are configured to generate electric charge responsive to incident light in the pixel region. Moreover, the image sensor includes first and second lenses that are on the second surface and are configured to pass the incident light toward the first and second photogates.

Image sensors with multiple lenses per pixel region

An image sensor includes a photoelectric device generating an electric charge from light; a feedback device generating a reset voltage using a predetermined reference voltage; and a pixel circuit generating a pixel voltage using the reset voltage and the electric charge, setting the reset voltage to the reference voltage using the feedback device a first period, and outputting the pixel voltage and the reset voltage during a second period.

Image sensor including feedback device to reduce noise during reset operation

An image sensor includes a plurality of row lines extending in a first direction, a plurality of column lines including a plurality of first column lines and a plurality of second column lines, the plurality of column lines intersects the plurality of row lines, and a plurality of pixels arranged along the plurality of row lines and the plurality of column lines, the plurality of pixels includes a plurality of pixel groups, each of the plurality of pixel groups includes two or more pixels. Each pixel includes a first photoelectric element, a second photoelectric element, a first pixel circuit connected to the first photoelectric element, and a second pixel circuit connected to the second photoelectric element. In each pixel group, the first pixel circuits share one of the plurality of first column lines and the second pixel circuits share one of the plurality of second column lines.

Semiconductor device

An interface capable of suppressing parasitic capacitance effects includes an array of switches switched in response to a switching signal. The interface suppresses effects of parasitic capacitance included in a bus, which transmits a reset signal and an image signal output from an image sensor. The suppressed parasitic capacitance effects suppress distortion of a digital image signal.

Image sensors, interfaces and methods capable of suppressing effects of parasitic capacitances

A sampling circuit samples an input signal by using at least one switch, at least one capacitor, an amplifier, and a clamp block connected between an output terminal and a negative input terminal of the amplifier. The clamp block prevents a difference between a voltage level of the output terminal of the amplifier and a voltage level of the negative input terminal of the amplifier during sampling from exceeding a maximum voltage difference.

Sampling circuit and image signal amplifying circuit each including feedback clamp block and image sensor including the image signal amplifying circuit

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Seoul, South Korea

Min-Sun Keel