Samsung Electronics Co., Ltd.

Min-su Baek

Chang-gyu Kim

Ji-hyun Choi

Seok-ji Hong

Methods of forming trench isolation regions include the steps of forming a trench in a semiconductor substrate having a surface thereon and then depositing an electrically insulating layer on the semiconductor substrate, to fill the trench. This depositing step is preferably performed by depositing an electrically insulating layer (e.g., SiO.sub.2) using a plasma chemical vapor. A mask layer is then formed on the electrically insulating layer. According to a preferred aspect of the present invention, the mask layer is planarized using chemical mechanical polishing, for example, to define a mask having openings therein that expose first portions of the electrically insulating layer extending opposite the surface. These first portions are also self-aligned to and extend opposite active portions of the substrate. The exposed portions of the electrically insulating layer are then etched using the mask as an etching mask. Then, the mask and second portions of the electrically insulating layer extending opposite the mask, are etched in sequence to define an electrically insulating region in the trench. This latter etching step is preferably not performed using a chemical mechanical polishing step to limit the likelihood of isolation deterioration caused by the dishing phenomenon.

Methods of forming shallow trench isolation regions using plasma

Isolation methods for integrated circuits use plasma chemical vapor deposition of an insulating layer followed by lift-off to remove at least portions of the insulating layer. In particular, a lift-off layer is formed on an integrated circuit substrate. The lift-off layer and the integrated circuit substrate beneath the lift-off layer are etched to form a trench in the integrated circuit substrate. The trench defines a first region on one side of the trench and a second region that is narrower than the first region on the other side of the trench. Plasma chemical vapor deposition is then performed to form an insulating layer filling the trench, on the first region and on the second region, with the insulating layer on the first region being thicker than on the second region. The insulating layer is then etched to expose the lift-off layer in the second region. The lift-off layer is then lifted off from the first region. Isolation trenches so formed can have improved isolation characteristics and can be planarized with reduced dishing effects.

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Kyungki-do, South Korea

Min-su Baek