Electronics and Telecommunications Research Institute

Lg Energy Solution, Ltd.

Min-Soo Park

Hyo-Hoon Park

Sang-hyun Park

Hye-Yong Chu

Byeoung-Su Yoo

Byeung-Su Yoo

Jun-Young Kwon

Seol Yoo

A Depth of Charge (DOC) setting apparatus includes a charging and discharging unit for completely charging a battery to a set target voltage and discharging the completely-charged battery; a profile obtaining unit for obtaining a voltage profile for capacity and voltage of the battery while the battery is charged and discharged and obtaining a differential profile for capacity and differential voltage of the battery from the obtained voltage profile; and a processor for sequentially selecting any one of a plurality of preset voltages and setting the selected preset voltage as the target voltage and for obtaining a feature value for a target peak in each of a plurality of differential profiles and setting a DOC for the battery based on the plurality of obtained feature values.

DOC setting apparatus and method

A method for non-active processing of an etched surface in a vertical-cavity surface-emitting laser diode is provided. In order to obtain a stable single fundamental transverse mode, at a low temperature of 100 to 300 degrees, an amorphous GaAs is deposited on a surface of an etched active layer and an etched cavity. Also, a bottom emitting laser is provided which is formed by, with the metal electrode as a mask, etching the top mirror layer and the active layer, depositing the amorphous GaAs onto the etched portion and planarizing the deposited GaAs layer and depositing p-type metal pad over the amorphous GaAs around the formed laser device. Also, a top emission type laser is provided which is formed by, with a photoresist as a mask, etching the top mirror layer and the active layer, planarizing the GaAs layer and depositing p-type metal pad containing a window for light emission which is made smaller than laser area over the amorphous GaAs around the formed laser device. Thus, a more stable single fundamental transverse mode than in the conventional device can be obtained.

Method for fabricating a vertical-cavity surface-emitting laser diode

The present invention is a vertical resonant surface-emitting laser, and more particularly, a method for making a micro-laser that can be emitted to the upper surface of resonance structures by forming electrodes on the side surface of the resonance structures. By forming the electrodes injecting the current to the active layer on the side surface of resonators, the electrodes may be formed more easily on the fine micro-laser. Moreover, the current is more efficiently injected to the inside the active layer due to the side electrode surrounding an upper glass layer and emitter, and the laser may be operated even with a smaller start current, and serial resistance of the resonators may be reduced.

Method for making a vertical resonant surface-emitting micro-laser

Growing community of inventors

Daejeon, South Korea

Min-Soo Park