Hyundai Electronics Industries Co. Ltd.

Min-Soo Kim

Chan Lim

Kyong-Min Kim

Chung-Tae Kim

Heung-Sik Kwak

A method for manufacturing an aluminum oxide film for use in a semiconductor device which includes the following steps: preparing a semiconductor substrate and setting the semiconductor substrate in a reaction chamber; supplying modified trimethyl aluminum (MTMA) as an aluminum source material into the reaction chamber so that it could be absorbed on the semiconductor substrate; discharging unreacted MTMA or by-product through a first pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status; supplying an oxygen source into the reaction chamber so that it could be absorbed on the semiconductor substrate; and discharging an unreacted oxygen source or by-product through a second pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status.

Method for manufacturing aluminum oxide film for use in a semiconductor device

A semiconductor device for use in a memory cell includes an active matrix an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of lower electrodes formed on top of the conductive plugs, Ta O films formed on the lower electrodes, composite films formed on the Ta O films and upper electrodes formed on the composite films.

Growing community of inventors

Ichon-shi, South Korea

Min-Soo Kim