Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Min-Seong Ryu

Bo-Sung Kim

Yong-Uk Lee

Mun-pyo Hong

Mun-Pyo Hong

Bo Sung Kim

Woo-Jae Lee

A method of manufacturing a thin film transistor array panel is provided, the method includes forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrodel; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.

Organic thin film transistor array panel and manufacturing method thereof

The present invention disclosed an organic thin film transistor, an organic thin film transistor array substrate and an organic thin film transistor display. The present invention disclosed organic materials which is proper for the application to a large screen display. The presentation also disclosed structures and a method for manufacturing such an organic thin film transistor, the organic thin film transistor array substrate and the organic thin film transistor display.

Thin film transistor array panel using organic semiconductor and a method for manufacturing the same

A method of manufacturing a thin film transistor array panel is provided, the method including: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrode; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.

An organic thin film transistor array panel is provided, which includes: a substrate; a data line formed on the substrate and including a source electrode; a drain electrode formed on the substrate and separated from the data line; an organic semiconductor disposed on the source electrode and the drain electrode; a gate insulator formed on the organic semiconductor; a gate line including a gate electrode disposed on the gate insulator; a passivation layer formed on the gate line and having a first contact hole on the drain electrode; a pixel electrode connected to the drain electrode through the first contact hole; and an opaque light blocking member disposed under the organic semiconductor.

Organic thin film transistor array and manufacturing method thereof

A method of forming an organic semiconductor pattern is provided. A pattern is formed on a first substrate. An adhesive is coated on the pattern to form an adhesive pattern. An organic semiconductor layer is formed on a second substrate. The second substrate is combined with the first substrate to remove a portion of the organic semiconductor layer attached to the pattern from the second substrate to form the organic semiconductor pattern.

Method of forming an organic semiconductor pattern and method of manufacturing an organic thin film transistor using the same

Organic semiconductor transistor with banks confining the semiconductor

A method of manufacturing a thin film transistor array panel is provided, the method includes: a substrate; a data line disposed on the substrate; an interlayer insulating layer disposed on the data line; a gate line disposed on the interlayer insulating layer and including a gate electrode; a gate insulating layer disposed on the gate line and the interlayer insulating layer, the gate insulating layer and the interlayer insulating film having a contact hole exposing the data line; a first electrode disposed on the gate insulating layer and connected to the data line through the contact hole; a second electrode disposed opposite the first electrode with respect to the gate electrode; an organic semiconductor disposed on the first and the second electrodes and contacting the first and the second electrodes; and a passivation member disposed on the organic semiconductor.

Growing community of inventors

Suwon-si, South Korea

Min-Seong Ryu