Hynix Semiconductor Inc.

Min-Seok Lee

Sung-Kwon Lee

Sang-Ik Kim

Weon-Joon Suh

Kuk-Han Yoon

A method for manufacturing a semiconductor memory device includes the steps of forming a mask layer on a target layer to be etched, coating a photoresist on the mask layer, exposing the photoresist by using a light resource whose wavelength is of about 157 nm to 193 nm, forming a photoresist pattern by developing the photoresist, forming a mask pattern by selectively etching the mask layer with an etching gas except of fluorine-based gases by using the photoresist pattern as an etching mask; and selectively etching the target layer by using the mask pattern as an etching mask.

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Ichon, Japan

Min-Seok Lee