Micron Technology Incorporated

Min Rui Ma

Xiangang Luo

Deping He

Chun Sum Yeung

Jie Zhou

Guang Hu

Methods, systems, and devices for determining offsets for memory read operations are described. In response to a threshold quantity of pages failing initial reads but being successfully read using a same reference adjustment during re-reads, the offset responsible for the adjustment may be used as a first-applied offset for subsequent re-reads or a baseline offset for subsequent initial reads. After the initial reads begin using the reference adjustment, if a threshold quantity of pages fail initial reads, the offset used for the initial read may be adjusted to be the offset used to perform the successful re-reads. If an updated offset to use a baseline is not identified, the baseline offset may be cleared so the original reference may again be used without adjustment for initial reads.

Determining offsets for memory read operations

Methods, systems, and devices for techniques for enhanced system performance after retention loss are described. A memory system may program a page of memory cells in response to receiving a power down notification. As part of the programming, the memory system may record an indication of a voltage threshold of the page and power down for a duration of time, during which the memory system may experience retention loss. Upon powering on, the memory device may compare the voltage threshold of the page to the indication stored prior to powering down and determine a voltage offset for one or more blocks of the memory system. In some cases, the memory system may use the voltage offset to determine a starting bin, and may initiate a bin scan to determine a final bin for the one or more blocks.

Techniques for enhanced system performance after retention loss

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Shanghai, China

Min Rui Ma