University of Electronic Science and Technology of China

Institute of Electronic and Information Engineering of Uestc in Guangdong

Institute of Electronic and Information Engineering in Dongguan, Uestc

Chengdu University of Technology

Min Ren

Bo Zhang

Zehong Li

Jinping Zhang

Jingxiu Liu

Yuci Lin

Wei Gao

Hao Kai Zhang

Yang Yang

Bin Yang

Bo Yang

Jiping She

Ying Zhong

Zhaoji Li

Yu Liu

Lei Luo

Xin Yao

Jingzhi Xiong

Yishang Zhao

Huiping Bao

Chi Xie

Yadong Shan

Zhiheng Su

Gaochao Xu

Di Yang

Yumeng Zhang

Xin Peng

Cong Di

The invention provides a suspension modifier directly added into fracturing fluid for real-time proppant modification during fracturing and the application thereof, relating to the field of oil and gas production technologies. The suspension modifier is a controlled release nanoemulsion and comprises surface hydrophobic modifier, surfactant, cosurfactant and water. The suspension modifier is directly added into clear-water or active-water fracturing fluid while the proppant is added into water. After stirring, the suspension modifier is capable of self-assembling and being adsorbed on the proppant surface, so that the proppant surface becomes hydrophobic and aerophilic. The invention no longer requires the proppant to be pretreated, and the bubble-suspended proppant can be obtained directly by adding the suspension modifier to the clear-water or active-water fracturing fluid, and meanwhile adding the proppant to the fracturing fluid. This technology is not only easy to operate, but also low in cost for proppant treatment.

Suspension modifier directly added into fracturing fluid for real-time proppant modification during fracturing and the application thereof

The present invention relates to the technical field of power semiconductor devices, particularly to an insulated gate bipolar transistor with a MOS controllable hole path. According to the present invention, a MOS controllable gate structure formed by a gate dielectric layer, a MOS control gate electrode and a P-type MOS channel region are embedded in a P+ floating p-body region of the conventional IGBT structure. The MOS region is equivalent to a switch controlled by a gate voltage. When the device is turned on under a forward voltage, the potential of the p-body region is floated to store holes, reducing the saturation conduction voltage drop of the device. Under the condition of turn-off and short-circuit, the hole extracting path is provided and the Miller capacitance is lowered, thereby lowering the turn-off losses and enhancing the short-circuit withstand capability.

IGBT device with MOS controllable hole path

A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby, the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

Trench MOS device with improved single event burn-out endurance

A junction termination with an internal field plate, the field plate structure and the junction termination extension region are folded inside the device to make full use of the thickness of the drift region in the body, thereby reducing the area of the termination and relieving the electric field concentration at the end of the PN junction. The breakdown position is transferred from the surface into the body of the original PN junction, and the withstand voltage of termination can reach to the breakdown voltage of the parallel plane junction. Under such design, a smaller area can be obtained than that of the conventional structure at the same withstand voltage.

Folded termination with internal field plate

The present invention relates to the field of semiconductor technology, particularly to a super-junction schottky diode. According to the present invention, the effective area of schottky junction is increased by forming the schottky junction in the trench located in the body of the device. Therefore, the current capacity of this novel schottky diode can be greatly improved. In addition, a super-junction structure is used to improve the device's reverse breakdown voltage and reduce the reverse leakage current. The super-junction schottky diode provided in the present invention can achieve a larger forward current, a lower on-resistance and a better reverse breakdown characteristic.

Super-junction schottky diode

A bidirectional Metal-Oxide-Semiconductor (MOS) device, including a P-type substrate, and an active region. The active region includes a drift region, a first MOS structure and a second MOS structure; the first MOS structure includes a first P-type body region, a first P+ contact region, a first N+ source region, a first metal electrode, and a first gate structure; the second MOS structure includes a second P-type body region, a second P+ contact region, a second N+ source region, a second metal electrode, and a second gate structure; and the drift region includes a dielectric slot, a first N-type layer, a second N-type layer, and an N-type region. The active region is disposed on the upper surface of the P-type substrate. The first MOS structure and the second MOS structure are symmetrically disposed on two ends of the upper layer of the drift region.

Bidirectional MOS device and method for preparing the same

A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.

Bidirectional insulated gate bipolar transistor

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Chengdu, China

Min Ren