Omnivision Technologies, Inc.

Min Qu

Rui Wang

Liang Zuo

Xuelian Liu

Hiroaki Ebihara

Lihang Fan

Yaowu Mo

Selcuk Sen

Chen Hui Xu

Zhiyong Zhan

Tiejun Dai

Yu-Shen Yang

Xiaodong Luo

Nijun Jiang

Joseph W Yang

Guangbin Zhang

Donghui Wu

Charles Qingle Wu

Liping Deng

Yingkan Lin

Jie Shen

Zhe Gao

Chao-Fang Tsai

Bi Yuan

Chun-Hsiang Chang

Wanqing Xin

Shan Chen

Sangjoo Lee

Yuedan Li

Hyunseok Lee

Zhengyu Li

Shaomin Ding

An imaging device includes a pixel array of pixel circuits arranged in rows and columns. Bitlines are coupled to the pixel circuits. Clamp circuits are coupled to the bitlines. Each of the clamp circuits includes a clamp short transistor to a power line and a respective one of the bitlines. The clamp short transistor is configured to be switched in response to a clamp short enable signal. A first diode drop device is coupled to the power line. A clamp idle transistor is coupled to the first diode drop device such that the first diode drop device and the clamp idle transistor are coupled between the power line and the respective one of the bitlines. The clamp idle transistor is configured to be switched in response to a clamp idle enable signal.

Bitline settling and power supply rejection ratio in a nine cell pixel image sensor with phase detection autofocus

In an embodiment, a method of reducing resistance-capacitance delay along photodiode transfer lines of an image sensor includes forking a plurality of photodiode transfer lines each into a plurality of sublines coupled together and to a first decoder-driver at a first end of each subline; and distributing selection transistors of a plurality of multiple-photodiode cells among the plurality of sublines. In embodiments, the sublines may be recombined at a second end of the sublines and driven by a second decoder-driver at the second end.

Circuit and method for image artifact reduction in high-density, high-pixel-count, image sensor with phase detection autofocus

An image sensor includes an array of multiple-photodiode cells, each photodiode coupled through a selection transistor to a floating diffusion of the cell, the selection transistors controlled by respective transfer lines, a reset, a sense source follower, and a read transistor coupled from the source follower to a data line. The array includes phase detection rows with phase detection cells and normal cells; and a compensation row of more cells. In embodiments, each phase detection row has cells with at least one photodiode coupled to the floating diffusion by selection transistors controlled by a transfer line separate from transfer lines of selection transistors of adjacent normal cells of the row. In embodiments, the compensation row has cells with photodiodes coupled to the floating diffusion by selection transistors controlled by a transfer line separate from transfer lines of selection transistors of adjacent normal cells of the compensation row.

Circuit and method for image artifact reduction in high-density, highpixel-count, image sensor with phase detection autofocus

An imaging device includes a pixel array of 1×3 pixel circuits that include 3 photodiodes in a column. Bitlines are coupled to the 1×3 pixel circuits. The bitlines are divided into groupings of 3 bitlines per column of the 1×3 pixel circuits. Each column of the 1×3 pixel circuits includes a plurality of first banks coupled to a first bitline, a plurality of second banks coupled to a second bitline, and a plurality of third banks coupled to a third bitline of a respective grouping of the 3 bitlines. The 1×3 pixel circuits are arranged into groupings of 3 1×3 pixel circuits per nine cell pixel structures that form a plurality of 3×3 pixel structures of the pixel array.

Nine cell pixel image sensor with phase detection autofocus

An arithmetic logic unit (ALU) includes a front end latch stage coupled to latch Gray code (GC) outputs of a GC generator in response to a comparator output. A signal latch stage is coupled to latch outputs of the front end latch stage. A GC to binary stage is coupled to generate a binary representation of the GC outputs latched in the signal latch stage. First inputs of an adder stage are coupled to receive outputs of the GC to binary stage. Outputs of the adder stage are generated in response to the first inputs and second inputs of the adder stage. A pre-latch stage is coupled to latch outputs of the adder stage. A feedback latch stage is coupled to latch outputs of the pre-latch stage. The second inputs of the adder stage are coupled to receive outputs of the feedback latch stage.

Arithmetic logic unit design in column analog to digital converter with shared gray code generator for correlated multiple samplings

A ramp generator providing ramp signal with high resolution fine gain includes a current mirror having a first and second paths to conduct a capacitor current and an integrator current responsive to the capacitor current. First and second switched capacitor circuits are coupled to the first path. A fractional divider circuit is coupled to receive a clock signal to generate in response to an adjustable fractional divider ratio K a switched capacitor control signal that oscillates between first and second states to control the first and second switched capacitor circuits. The first and second switched capacitor circuits are coupled to be alternatingly charged by the capacitor current and discharged in response to each the switched capacitor control signal. An integrator coupled is to the second path to generate the ramp signal in response to the integrator current.

Ramp generator providing high resolution fine gain including fractional divider with delta-sigma modulator

A clock control circuit of an ADC includes a plurality of fractional divider circuits, each including a programmable integer divider coupled to receive an enable skew signal, a clock signal, and an output integer signal to divide down the clock signal by a factor responsive to the output integer signal to generate a fractional divider signal. A delta-sigma modulator is coupled to receive a fractional modulus signal, an input integer signal, and the fractional divider signal to generate the output integer signal, which is a varying signal each cycle and having a long term average DC value substantially equal to a fractional divider ratio K. An extended gain control circuit is coupled to receive the fractional divider signal from each of the fractional divider circuits to generate a plurality of ramp clock signals with adjustable frequencies to adjust a gain setting of a ramp generator of the ADC.

Analog to digital converter clock control to extend analog gain and reduce noise

A readout circuit for use in an image sensor includes a plurality of comparators. Each one of the plurality of comparators is coupled to receive a ramp signal and a respective analog image data signal from a respective one of a plurality of column bit lines to generate a respective comparator output. Each one of a plurality of arithmetic logic units (ALUs) is coupled to receive phase-aligned Gray code (GC) outputs generated by a GC generator. Each one of the plurality of ALUs is further coupled to a respective one of the plurality of comparators to receive the respective comparator output. Each one of the plurality of ALUs is coupled to latch the phase-aligned GC outputs in response to the respective comparator output to generate a respective digital image data signal.

Image sensor with shared gray code generator and parallel column arithmetic logic units

An image sensor includes a pixel array with active rows of pixel cells, a black level calibration row with black image data generation circuits coupled to generate black image data signals representative of an absence of the incident light, and a dummy row with black level clamping circuits coupled to receive a black sun reference voltage to clamp bitlines of the pixel array, and a black level calibration circuit coupled to receive the black sun reference voltage to generate a black sun calibration voltage. A black sun feedback circuit is coupled to generate the black sun reference voltage in response to the black sun calibration voltage and a black level sample reference, and a black level sampling circuit is coupled to the bitlines to sample the black image data signals to generate the black level sample reference received by the black sun feedback circuit.

Image sensor with frame level black level calibration

An analog to digital conversion (ADC) circuit includes a ramp circuit coupled to output a ramp signal, and the ramp signal is offset from a starting voltage by an offset voltage. The ramp signal ramps towards the starting voltage. A counter circuit is coupled to the ramp circuit to start counting after the ramp signal returns to the starting voltage, and a comparator is coupled to the counter circuit and a bitline to compare the ramp signal to a pixel signal voltage on the bitline. In response to the ramp signal equaling the pixel signal voltage, the comparator stops the counter.

Circuit and method for control of counter start time

An image sensor includes a pixel array with rows and columns of pixels. Each row of the pixel array has a first end that is opposite a second end of each row of the pixel array. Control circuitry is coupled to the first end of each row of the pixel array to provide control signals to each row of the pixel array from the first end of each row of the pixel array. Far end driver circuitry coupled to the second end of each row of the pixel array to selectively further drive from the second end of each row of the pixel array the control signals provided by the control circuitry from the first end of each row of the pixel array. The control circuitry is further coupled to provide far end control signals to the far end driver circuitry.

Image sensor far end driver circuitry providing fast settling row control signals

A photodiode is adapted to accumulate image charges in response to incident light. A transfer transistor is coupled between the photodiode and a floating diffusion to transfer the image charges from the photodiode to the floating diffusion. A transfer gate voltage controls the transmission of the image charges from a transfer receiving terminal of the transfer transistor to the floating diffusion. A reset transistor is coupled to supply a supply voltage to the floating diffusion. A source follower transistor is coupled to receive voltage of the floating diffusion from a gate terminal of the source follower and provide an amplified signal to a source terminal of the source follower. A row select transistor is coupled to enable the amplified signal from the SF source terminal and output the amplified signal to a bitline. A bitline enable transistor is coupled to link between the bitline and a bitline source node. The bitline source node is coupled to a blacksun voltage generator. A current source generator is coupled between the bitline source node and a ground. The current source generator provides adjustable current to the bitline source node through a bias transistor controlled by a bias control voltage.

Bitline settling improvement and FPN reduction by floating bitline during charge transfer

A readout circuit for use in an image sensor includes a system ramp generator coupled to generate a system ramp signal. A plurality of analog-to-digital converters is coupled to a plurality of column bitlines from a pixel array to receive corresponding analog column image signals. An isolation ramp buffer is coupled between the system ramp generator and the analog-to-digital converters. The isolation ramp buffer includes a single input to receive the system ramp signal, and a plurality of isolated outputs. Each of the isolated outputs is coupled to provide an isolated column ramp signal to a corresponding analog-to-digital converter. Each of the of analog-to-digital converters is coupled to generate a corresponding digital column image signal in response to the corresponding analog column image signal and corresponding isolated column ramp signal.

Horizontal banding reduction with ramp generator isolation in an image sensor

Readout circuitry to readout an array of image sensor pixels includes readout units that include a plurality of analog-to-digital converters ('ADCs'), a plurality of blocks of Static Random-Access Memory ('SRAM'), and a plurality of blocks of Dynamic Random-Access Memory (&#x201c;DRAM&#x201d;). The plurality ADCs is coupled to readout analog image signals two-dimensional blocks of the array of image sensor pixels. The plurality of blocks of SRAM is coupled to receive digital image signals from the ADCs. The digital image signals are representative of the analog image signal readout from the two-dimensional block of pixels. The plurality of blocks of DRAM is coupled to the blocks of SRAM. Each block of SRAM is coupled to sequentially output the digital image signals to each of the blocks of DRAM. Each of the readout units are coupled to output the digital image signals as a plurality of Input/Output (&#x201c;IO&#x201d;) signals.

Readout circuitry for image sensor

A system, method and apparatus implementing a multiple-row concurrent readout scheme for high-speed CMOS image sensor with backside illumination are described herein. In one embodiment, the method of operating an image sensor starts acquiring image data within a color pixel array and the image data from a first set of multiple rows in the color pixel array is then concurrently readout. Concurrently reading out the image data from the first set of multiple rows includes concurrently selecting a first portion of the image data from the first set by first readout circuitry and a second portion of the image data from the first set by second readout circuitry. The first and second portions of the image data from the first set are different and the first and second readout circuitries are also different. Other embodiments are also described.

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Mountain View, CA, United States of America

Min Qu