Rohm and Haas Electronic Materials Korea Ltd.

Other

Min-Kyung Jang

Dong-Yong Kim

Chang-Young Hong

Eui-Hyun Ryu

Eui Hyun Ryu

Hae-Jin Lim

Myung Yeol Kim

Jae Yun Ahn

Jung-June Lee

Hyun Bae Jeon

Dong-Je Hong

Dong Je Hong

Ohk-Min Jeon

Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Overcoat compositions and methods for photolithography

New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Photoresist compositions and methods

Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.

New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.

New photobase generators suitable for use in photoresists are provided that correspond to Formula (I):X&#x2014;R&#x2014;O&#x2014;C(&#x2550;O)N(R)R&#x2003;&#x2003;(I)wherein Xis an optionally substituted aromatic group; Ris a linker; and Rand Rare the same or different optionally substituted linear, branched or cyclic aliphatic group or an optionally substituted aromatic group, wherein at least one of Rand Ris an optionally substituted branched alkyl group having 4 or more carbon atoms.

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Seoul, South Korea

Min-Kyung Jang