Samsung Electronics Co., Ltd.

Min-kyu Yang

Seong-Geon Park

Hyun-Su Ju

Eun-Mi Kim

Hideki Horii

Dong-Ho Ahn

Dong-Jun Seong

Jung-Moo Lee

Seol Young Choi

A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.

Variable resistance memory device and method of manufacturing the same

According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.

Nonvolatile memory cell and nonvolatile memory device including the same

Nonvolatile stacked memory structure with a resistance change film between a vertical electrode and horizontal electrodes

Growing community of inventors

Hwaseong-si, South Korea

Min-kyu Yang