Samsung Electronics Co., Ltd.

Yonsei University

Min-kwan Shin

Jong-Jin Park

Jung-kyun Im

Un-yong Jeong

Min-Woo Park

Chwee Iin Choong

Provided are a material for forming a channel layer for a stretchable TFT, a method of preparing a channel layer for a stretchable TFT, a channel layer for a stretchable TFT, and a stretchable TFT. The material for forming the channel layer for the stretchable TFT includes an elastomer, an organic semiconductor material and a solvent. By mixing an elastomer and an organic semiconductor material and forming a thin film, a channel layer having an excellent conductivity and stretchability may be obtained.

Channel layer for stretchable transistors

A foldable thin film transistor (TFT) is provided, the foldable TFT including: a foldable substrate; source and drain electrodes interconnected on the foldable substrate; a channel layer including nanofibers of an organic semiconductor connecting the source and drain electrodes; a gate electrode electronically connected with the source and drain electrodes and the channel layer; and a gate insulating layer disposed between the channel layer and the gate electrode and comprising an ionic liquid and a resin.

Foldable thin film transistor

Growing community of inventors

Seoul, South Korea

Min-kwan Shin