Samsung Display Co., Ltd.

Dong-a St Co., Ltd.

Kyung-in Synthetic Co., Ltd.

Chung Ang University Industry Academic Cooperation

Min-Jung Lee

Yoon-Ho Khang

Do-Hyun Kwon

Yong-Su Lee

Se-Hwan Yu

Sung-Eun Lee

Jung-Kyu Lee

Il-Jeong Lee

Su-Hyoung Kang

Sang-ho Park

Sun-Ho Choi

Ji-Hoon Choi

Sang-Ho Park

Kwang-Young Choi

Dong-Hwan Shim

Weon-Bin Im

Sung-Hak Choi

Jung-Sang Park

Soonhyun Park

Hyun Jae Chun

Jeong Gi Kim

Do Kyung Lee

Jung Rok Kim

Chong-Hwan Cho

Moo-Soon Ko

Dong-Jo Kim

Soon-Hoe Kim

Ji-Su Kim

Woo Young Kwak

Jin-Hyuk Kim

Hyun-Jung Sung

Yoon-ho Khang

Nam-Il Kim

Mi-Yeon Kim

Chang-Yong Shin

Kang-Hun Cho

Hyung-Keun Lee

Punna Reddy Ullapu

Youna Lee

Yoon-Jung Kim

Seung-Il Park

Cheon-Hyoung Park

Seung-Hyun Song

Jun-Hwan Moon

Youn A Lee

Ho-Sang Moon

Jin-Young Shim

The present invention relates to a novel salt of (R)-(1-methylpyrrolidine-3-yl)methyl(3'-chloro-4&#x2032;-fluoro-[1,1&#x2032;-biphenyl]-2-yl)carbamate and a crystal form thereof. Also, the novel salt of (R)-(1-methylpyrrolidine-3-yl)methyl(3&#x2032;-chloro-4&#x2032;-fluoro-[1,1&#x2032;-biphenyl]-2-yl)carbamate and the crystal form thereof according to examples of the present invention have remarkably excellent stability, hygroscopicity and solubility.

Salt of (R)-(-methylpyrrolidine--yl)methyl(-chloro--fluoro-[-biphenyl]--yl)carbamate and crystal form thereof

The present disclosure relates to a novel tetrahydropyridine derivative compound, a stereoisomer thereof, or a pharmaceutically acceptable salt thereof, methods for preparing the compounds, methods for inhibiting UDP-3-O&#x2014;(R-3-hydroxymyristoyl)-N-acetylglucosamine deacetylase (LpxC), methods for treating Gram-negative bacterial infections, the use of the compounds for the preparation of therapeutic medicaments for treating Gram-negative bacterial infections, and pharmaceutical compositions for prevention or treatment of Gram-negative bacterial infections, which contain the compounds. The compounds represented by formula I, stereoisomers thereof or pharmaceutically acceptable salts thereof according to the present disclosure can exhibit excellent effects on the treatment bacterial infections.

Tetrahydropyridine derivatives and their use as antibacterial agents

A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Thin film transistor substrate and method of manufacturing the same

Provided are biphenyl derivatives having the structure of Formula 1: stereoisomers thereof, and pharmaceutically acceptable salts thereof, wherein Ris hydrogen, halogen, hydroxy, substituted or unsubstituted C-Calkyl, or C-Calkoxy; R, Rand Rare each independently hydrogen, halogen, substituted or unsubstituted amino, nitro, cyano, hydroxy, substituted or unsubstituted C-Calkyl, substituted or unsubstituted C-Calkoxy, or &#x2014;C(O)R; Ris hydrogen or C-Calkyl; n is 0 or 1; and Ris hydrogen or amino, methods for preparing the same, and a pharmaceutical composition containing the same. The biphenyl derivatives having the structure of Formula 1 act as muscarinic M3 receptor antagonists, and thus are useful for the prevention or treatment of a disease selected from among chronic obstructive pulmonary disease, asthma, irritable bowel syndrome, urinary incontinence, rhinitis, spasmodic colitis, chronic cystitis, Alzheimer's disease, senile dementia, glaucoma, schizophrenia, gastroesophageal reflux disease, cardiac arrhythmia, and hyper-salivation syndromes.

Biphenyl derivatives and methods for preparing same

A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

Thin film transistor substrate, display device having the same and method of manufacturing the same

The present invention relates to a polymeric triarylmethane dye, a blue resin composition for a color filter including the polymeric dye, and a color filter using the resin composition. The blue resin composition of the present invention is highly soluble in solvents and has excellent luminance, contrast, heat resistance, and chemical resistance due to the use of the polymeric triarylmethane dye. Particularly, the blue resin composition exhibits higher luminance and contrast than blue resin compositions using existing pigments. In addition, the blue resin composition of the present invention has greatly improved heat resistance and chemical resistance compared to blue resin compositions using existing triarylmethane dye monomers.

Polymeric triarylmethane dye, blue resin composition including for color filter including the polymeric dye and color filter using the resin composition

Disclosed is a blue dye compound for a color filter represented by Chemical Formula 1. The blue colored resin composition including the blue dye compound has excellent solubility to an organic solvent, such as propylene glycol methyl ether acetate (PGMEA), excellent miscibility with the other dyes or pigments and high heat resistance. Therefore, when using the blue dye compound, it is possible to obtain a color filter having high luminance and contrast.

Blue dye compound, blue resin composition for color filter containing same and color filtering using same

Disclosed are a method and system for measuring leakage area for construction of smoke control equipment. The invention provides a system for measuring a leakage area of a test room that can include: a chamber positioned in the test room and storing air compressed by a compressor; one or more pressure sensors configured to measure a pressure change of the test room when the compressed air in the chamber is discharged instantaneously; and a gauging means configured to measure an effective leakage area in the test room by using a pressure change value of the test room detected by the one or more pressure sensors. Embodiments of the invention can enable an accurate measurement of leakage area at low cost.

System and method for measuring a leakage area for constructing a smoke-ventilation apparatus

A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness.

Thin film transistor display panel and method of manufacturing the same

A thin film transistor (TFT) includes a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode. The semiconductor active layer includes a first doped region as a source region, a second doped region as a drain region, an undoped region between the first and second doped regions. A third doped region is disposed between the second doped region and the undoped region. The gate electrode is insulated from the semiconductor active layer and overlaps the third doped region and the undoped region. The source electrode and the drain electrode are connected to the first and second doped regions.

Thin film transistor and manufacturing method thereof

A display device includes a substrate, an active layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a clad layer, a source electrode, and a drain electrode. The active layer is disposed on the substrate. The gate insulation layer is disposed on the active layer. The gate electrode is disposed on the gate insulation layer. The interlayer insulation layer is disposed on the gate electrode. A dielectric constant of the interlayer insulation layer is less than a dielectric constant of the gate insulation layer. The clad layer is disposed on the interlayer insulation layer. The source and drain electrodes are disposed on the clad layer.

Display device and method of manufacturing the same

Thin film transistor substrate and display device having the same

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Seoul, South Korea

Min-Jung Lee