Samsung Electronics Co., Ltd.

Min-Ju Park

Hyun-woo Kim

Su-Min Park

Kyoung-seon Kim

Hyo-Jin Yun

Hai-sub Na

So-Ra Han

Su-Min Kim

In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Methods of manufacturing semiconductor devices

Growing community of inventors

Seoul, South Korea

Min-Ju Park