Growing community of inventors

Daejeon, South Korea

Min-Jeong Lee

Average Co-Inventor Count = 2.57

ph-index = 1

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 3

Min-Jeong LeeDong-Hoon Lee (149 patents)Min-Jeong LeeHyeon Sik Choi (1 patent)Min-Jeong LeeDong-Ryul Kim (1 patent)Min-Jeong LeeJae-Soon Bae (22 patents)Min-Jeong LeeJung-Bum Kim (22 patents)Min-Jeong LeeKong-Kyeom Kim (18 patents)Min-Jeong LeeHee-Jung Kim (1 patent)Min-Jeong LeeDae-Woong Lee (15 patents)Min-Jeong LeeJae-Min Lee (1 patent)Min-Jeong LeeYoung-Whan Park (1 patent)Min-Jeong LeeIn-Ho Hwang (1 patent)Min-Jeong LeeJong-Mo Jung (1 patent)Min-Jeong LeeJun-Gi 7-401 Lg Chemical Apartment Jang (0 patent)Min-Jeong LeeYeon-Hwan 1612-801 Munchonmaul 16 Danji Apt Kim (0 patent)Min-Jeong LeeMin-Jeong Lee (3 patents)Dong-Hoon LeeDong-Hoon Lee (149 patents)Hyeon Sik ChoiHyeon Sik Choi (107 patents)Dong-Ryul KimDong-Ryul Kim (28 patents)Jae-Soon BaeJae-Soon Bae (22 patents)Jung-Bum KimJung-Bum Kim (22 patents)Kong-Kyeom KimKong-Kyeom Kim (18 patents)Hee-Jung KimHee-Jung Kim (16 patents)Dae-Woong LeeDae-Woong Lee (15 patents)Jae-Min LeeJae-Min Lee (8 patents)Young-Whan ParkYoung-Whan Park (6 patents)In-Ho HwangIn-Ho Hwang (5 patents)Jong-Mo JungJong-Mo Jung (3 patents)Jun-Gi 7-401 Lg Chemical Apartment JangJun-Gi 7-401 Lg Chemical Apartment Jang (0 patent)Yeon-Hwan 1612-801 Munchonmaul 16 Danji Apt KimYeon-Hwan 1612-801 Munchonmaul 16 Danji Apt Kim (0 patent)
..
Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. Lg Chem, Ltd (2 from 8,305 patents)

2. Lg Energy Solution, Ltd. (1 from 2,450 patents)


3 patents:

1. 11480552 - Method for measuring content of moisture in secondary battery separator

2. 8344164 - Polyheterocyclic compound, organic electronic device using polyheterocyclic compound, and electronic apparatus including organic electronic device

3. 8057870 - Composition for forming gate insulating layer of organic thin-film transistor and organic thin film transistor using the same

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as of
12/6/2025
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