Electronics and Telecommunications Research Institute

Korea Advanced Institute of Science and Technology

Min Je Park

Min Gyu Choi

Sung Yong Shin

Haecheon Kim

Chang-hee Hyoung

Jae-kyoung Mun

Hong-gu Ji

Ho-kyun Ahn

The present invention relates to the motion reconstruction method from inter-frame feature correspondences of a singular video stream using a motion library. The motion library is constructed through a motion capture system which is becoming more actively used or skilled animators. The present invention comprises the detailed information on the whole processes from images to motions. These processes are very simple to implement and straight forward. The total movement of a motion can be effectively inferenced and this technology can directly used for various fields in which human motions are produced from the images.

Motion reconstruction method from inter-frame feature correspondences of a singular video stream using a motion library

A pseudomorphic high electron mobility transistor (PHEMT) power device formed on a double planar doped epitaxial substrate and capable of operating with a single voltage source and a method for manufacturing the PHEMT power device are provided. The PHEMT power device includes: an epitaxial substrate including a GaAs buffer layer, an AlGaAs/GaAs superlattice layer, an updoped AlGaAs layer, a first doped silicon layer, a first spacer, an InGaAs electron transit layer, a second spacer, a second doped silicon layer having a different doping concentration from the first doped silicon layer, a lightly doped AlGaAs layer, and an undoped GaAs cap layer stacked sequentially on a semi-insulating GaAs substrate; a source electrode and a drain electrode formed on and in ohmic contact with the undoped GaAs cap layer; and a gate electrode formed on the lightly doped AlGaAs layer to extend through the undoped GaAs cap layer.

Pseudomorphic high electron mobility transistor power device

Growing community of inventors

Daejon, South Korea

Min Je Park