Samsung Electronics Co., Ltd.

Min Hwan Jeon

Sug Hyun Sung

Chong Kwang Chang

Dong Hoon Khang

Chan Ho Park

Doo Won Kwon

Dong-Chul Lee

Kyung Rae Byun

A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.

Method of fabricating semiconductor device

An image sensor includes; a photoelectric conversion element disposed on a substrate, a fence structure disposed on the substrate and including a low refractive index layer stacked on a barrier layer, wherein the barrier layer includes at least one metal, and a color filter disposed inwardly lateral with respect to a sidewall of the fence structure, wherein the barrier layer includes an inward lateral protrusion.

Image sensor including fence structure disposed laterally of color filters

Growing community of inventors

Hwaseong-si, South Korea

Min Hwan Jeon